Localized Plasma Processing

• US 20110117748A1
• Filed: 09/07/2010
• Published: 05/19/2011
• Est. Priority Date: 08/27/2004
• Status: Active Grant

• Current Assignee: FEI Company (Thermo Fisher Scientific Incorporated)
• Original Assignee: FEI Company (Thermo Fisher Scientific Incorporated)
• Inventors: Chandler, Clive D., Smith, Noel
• Granted Patent: US 8,530,006 B2
• Time in Patent Office: Days
• US Class Current: 438/710
• CPC Class Codes: B81C 1/00531 Dry etching
• CPC Class Codes: C23C 16/047 using irradiation by energy or particles
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32366 Localised processing

Abstract

A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

Claims

1-6. -6. (canceled)

7. A method of processing a work piece, comprising:

inserting the work piece into a vacuum chamber;

producing a plasma in a plasma chamber;

passing a plasma jet through a reactive gas chamber;

activating the reactive gas and directing the reactive gas toward a work piece to process the work piece in the vacuum chamber; and

directing a focused charged particle beam toward the work piece to process the work piece without removing the work piece from the vacuum chamber.

8. The method of claim 7 in which directing the reactive gas toward the work piece includes directing reactive gas atoms having an energy of less than 50 eV toward the work piece.

9. The method of claim 7 in which directing the reactive gas toward the work piece includes directing reactive gas atoms having an energy of less than 100 eV toward the work piece.

10. The method of claim 7 in which directing the reactive gas toward the work piece includes directing a jet of reactive gas, the jet having a diameter of less than 2 mm.

11. The method of claim 7 in which directing the reactive gas toward the work piece includes directing a jet of reactive gas, the jet having a diameter of less than 1.0 mm.

12. The method of claim 7 in which directing the reactive gas toward the work piece includes directing a jet of reactive gas, the jet having a diameter of less than 0.5 mm.

25. The method of claim 7 in which the reactive gas chamber is positioned between the plasma chamber and the work piece and in which passing a plasma jet through a reactive gas chamber includes passing the plasma jet a sufficient distance through the reactive gas to allow interaction between the plasma and reactive gas to activate a sufficient amount of reactive gas to process the sample, but not through a distance that allows the reactive gas to absorb the plasma before a jet sufficient to process the work piece exits the chamber.

13-24. -24. (canceled)

26. A method of processing a work piece, comprising:

inserting the work piece into a vacuum chamber;

producing a plasma;

using the plasma to activate a reactive gas;

directing the reactive gas toward a work piece to process the work piece in the vacuum chamber; and

directing a focused charged particle beam toward the work piece to process the work piece without removing the work piece from the vacuum chamber.

27. The method of claim 26 in which directing a focused charged particle beam toward the work piece includes directing a focused ion beam toward the work piece or directing a focused electron beam toward the work piece.

28. The method of claim 26 in which directing the reactive gas toward a work piece to process the work piece in the vacuum chamber includes directing a deposition precursor gas towards the work piece, the deposition precursor gas decomposing to deposit a material onto the work piece surface.

29. The method of claim 26 in which directing a deposition precursor gas toward the work piece includes directing a deposition precursor gas toward the work piece to deposit a conductive layer.

30. The method of claim 26 in which:

directing a deposition precursor gas toward the work piece includes directing a deposition precursor gas toward the work piece to deposit a protective layer before focused particle beam processing; and

directing a focused charged particle beam toward the work piece to process the work piece without removing the work piece from the vacuum chamber includes directing a focused ion beam toward the protective layer.

31. The method of claim 26 in which directing the reactive gas toward a work piece to process the work piece in the vacuum chamber includes directing an etch precursor gas toward the work piece, the etch precursor gas combining with a material on the surface of the work piece to remove the material from the work piece surface.

32. The method of claim 26 in which directing the reactive gas toward a work piece to process the work piece in the vacuum chamber includes directing an etch precursor gas toward the work piece, the etch precursor gas removing a first material from the work piece surface at a greater removal rate than the etch precursor gas removes a second material from the work piece surface.

33. The method of claim 26 in which directing the reactive gas toward a work piece includes directing an etch precursor gas toward the surface to remove contamination from the surface and further comprising subsequently observing the work piece using a scanning electron microscope.

34. The method of claim 26 in which:

directing a focused charged particle beam toward the work piece to process the work piece includes exposing a cross section using a focused ion beam; and

directing the reactive gas toward a work piece includes directing an activated etchant toward the exposed cross section to delinate different exposed layers of the cross section; and

further comprising;

observing the cross section in the vacuum chamber using a scanning electron microscope.

35. The method of claim 26 in which producing a plasma includes producing a plasma from a plasma source having an input power of less than 100 W.

36. The method of claim 26 in which producing a plasma includes producing a plasma from a plasma source having an input power of less than 50 W.

37. The method of claim 26 in which producing a plasma includes producing a plasma from an inductively coupled plasma source.

38. The method of claim 26 in which directing the reactive gas toward a work piece includes providing an electrical bias between a plasma source and the work piece to control the energy at which ions from the plasma impact and process the work piece.

39. The method of claim 26 in which directing the reactive gas toward the work piece includes directing the reactive gas through an aperture sufficiently small that the area impacted by a plasma beam from the plasma chamber has a diameter of less than 5 mm.

40. The method of claim 26 in which directing the reactive gas toward the work piece includes directing the reactive gas through an aperture sufficiently small that an area impacted by a plasma beam from the plasma chamber is less than 1/10 the area of the work piece.

41. The method of claim 26 in which directing the reactive gas toward a work piece to process the work piece includes passing the reactive gas through a beam-limiting aperture before impacting the work piece.

42. The method of claim 26 in which the reactive gas processes the work piece at a first position and in which the focused charged particle beam processes the work piece at a second position and further comprising moving the work piece between the first and second processing positions.

43. The method of claim 26 in which the reactive gas and the focused charged particle beam process the work piece at the same position in the vacuum chamber.