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METHOD FOR REDUCING LINE WIDTH ROUGHNESS WITH PLASMA PRE-ETCH TREATMENT ON PHOTORESIST

  • US 20110117749A1
  • Filed: 11/17/2009
  • Published: 05/19/2011
  • Est. Priority Date: 11/17/2009
  • Status: Active Grant
First Claim
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1. A method for reducing line width roughness (LWR) of a feature in an etch layer below a patterned photoresist mask having mask features, the method comprising:

  • non-etching plasma pre-etch treatment of the photoresist mask, comprising;

    providing a treatment gas containing H2 and COS;

    forming a plasma from the treatment gas;

    stopping the treatment gas; and

    etching a feature in the etch layer through the pre-treated photoresist mask using an etching gas.

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