DAMAGE SENSORS AND PROCESSING ARRANGEMENTS THEREFOR

• US 20110118990A1
• Filed: 05/21/2009
• Published: 05/19/2011
• Est. Priority Date: 05/27/2008
• Status: Abandoned Application

• Current Assignee: BAE Systems Plc
• Original Assignee: BAE Systems Plc
• Inventors: Sidhu, Jagjit, Foote, Peter David
• Application Number:
  US12/995,085
• Publication Number:
  US 20110118990A1
• Time in Patent Office: Days
• US Class Current: 702/35
• CPC Class Codes: G01B 7/16 for measuring the deformation in a solid, e.g. by resistance strain gauge
• CPC Class Codes: G01M 5/00 Investigating the elasticity of structures, e.g. deflection of bridges or air-craft wings G01M9/00 takes precedence
• CPC Class Codes: G01N 2203/0244 Tests performed "in situ" or after "in situ" use
• CPC Class Codes: G01N 2203/0617 Electrical or magnetic indicating, recording or sensing means

Abstract

A damage sensing system, and a method of sensing damage using the system, are described. The system comprises: a plurality of tuned circuits arranged in parallel, each tuned circuit having a different resonant frequency; and processing means for discriminating the response of the different tuned circuits according to their respective different resonant frequencies, for example by processing changes in the respective Q-factors of the respective tuned circuits; wherein each of the plurality of tuned circuits comprises a respective damage sensor, each damage sensor comprising at least one direct write resistive element applied to an area of a substrate by a direct write process. Each tuned circuit may comprise a common resistor in series with the respective damage sensor. The plurality of the tuned circuits may be coupled to the processing means by a shared single pair of external connections.

Claims

1. A damage sensing system, comprising:

a plurality of tuned circuits arranged in parallel, each tuned circuit having a different resonant frequency; and

processing means for discriminating a response of different tuned circuits according to their respective different resonant frequencies, wherein each of the plurality of tuned circuits includes a respective damage sensor, each damage sensor having at least one direct write resistive element applied to an area of a substrate by a direct write process.

2. A system according to claim 1, wherein each tuned circuit comprises:

a common resistor in series with the respective damage sensor.

3. A system according to claim 2, wherein the common resistor is formed by direct write.

4. A system according to claim 1, wherein each tuned circuit comprises:

a respective LC circuit in series with the respective damage sensor.

5. A system according to claim 4, wherein the LC circuits are formed by direct write.

6. A system according to claim 1, wherein the processing means is a signal generator and analyser.

7. A system according to claim 1, wherein the processing means is arranged to provide a range of driving frequencies and to frequency sweep resultant signals received back to determine signal amplitudes at different frequencies, and to sense damage by sensing a change in the response due to a resistance change in the direct write resistive element of the damage sensor.

8. A system according to claim 1, wherein the processing means is arranged to process changes in the respective Q-factors of the respective tuned circuits.

9. A system according to claim 1, wherein the plurality of the tuned circuits are coupled to the processing means by a shared single pair of external connections.

10. A system according to claim 1, wherein the number of tuned circuits is equal to or greater than 10.

11. A system according to claim 10, wherein the number of tuned circuits is equal to or greater than 20.

12. A system according to claim 11, wherein the number of tuned circuits is equal to or greater than 50.

13. A system according to claim 12, wherein the number of tuned circuits is equal to or greater than 100.

14. A system according to claim 1, wherein the number of direct write resistive elements in each damage sensor is one and wherein each damage sensor comprises:

a first direct write conductive track and a second direct write conductive track adjoining respectively two separated portions of a perimeter of an area of the direct write resistive element.

15. A system according to claim 14 wherein the direct write resistive element is substantially rectangular shaped, and the two separated portions of the perimeter are along respective adjacent lengths of two opposing sides of the rectangle.

16. A system according to claim 1, wherein each damage sensor comprises:

a plurality of the direct write resistive elements each extending between and connected to a first direct write track and a second direct write track.

17. A system according to claim 1, wherein each damage sensor comprises:

a plurality of the direct write resistive elements each in the form of an annular resistive element, the plural annular resistive elements being positioned in an annular arrangement with respect to each other with respective gaps provided between respective annular resistive elements; and

conductive tracks between the respective annular resistive elements.

18. A system according to claim 17, wherein the annular resistive elements are substantially circular shaped and wherein centres of each are substantially collocated.

19. A system according to claim 1, wherein each damage sensor has a resistance greater than or equal to 10Ω

.

20. A system according to claim 19, wherein each damage sensor has a resistance greater than or equal to 20Ω

.

21. A system according to claim 20, wherein each damage sensor has a resistance greater than or equal to 50Ω

.

22. A method of sensing damage, the method comprising:

providing a plurality of tuned circuits arranged in parallel, each tuned circuit having a different resonant frequency; and

discriminating a response of the different tuned circuits according to their respective different resonant frequencies wherein each of the plurality of tuned circuits includes a respective damage sensor, each damage sensor having at least one direct write resistive element applied to an area of a substrate by a direct write process.

23. A method according to claim 22, wherein each tuned circuit comprises:

a common resistor in series with the respective damage sensor.

24. A method according to claim 23, wherein the common resistor is formed by direct write.

25. A method according to claim 22, wherein each tuned circuit comprises:

a respective LC circuit in series with the respective damage sensor.

26. A method according to claim 25, wherein the LC circuits are formed by direct write.

27. A method according to claim 22, wherein the discriminating is performed by a signal generator and analyser.

28. A method according to claim 22, comprising:

providing a range of driving frequencies and frequency sweeping resultant signals received back to determine signal amplitudes at different frequencies, and sensing damage by sensing a change in the response due to a resistance change in the direct write resistive element of the damage sensor.

29. A method according to claim 22, comprising:

processing changes in respective Q-factors of the respective tuned circuits.

30. A method according to claim 22, wherein the plurality of the tuned circuits are coupled to means for performing the discriminating by a shared single pair of external connections.

31. A method according to claim 22, wherein the number of tuned circuits is equal to or greater than 10.

32. A method according to claim 22, wherein the number of tuned circuits is equal to or greater than 20.

33. A method according to claim 32, wherein the number of tuned circuits is equal to or greater than 50.

34. A method according to claim 33, wherein the number of tuned circuits is equal to or greater than 100.

35. A method according to claim 22, wherein each damage sensor has a resistance greater than or equal to 10Ω

.

36. A method according to claim 22, wherein each damage sensor has a resistance greater than or equal to 20Ω

.

37. A method according to claim 22, wherein each damage sensor has a resistance greater than or equal to 50Ω

.