CHARGED PARTICLE BEAM DRAWING APPARATUS AND ELECTRICAL CHARGING EFFECT CORRECTION METHOD THEREOF

• US 20110121208A1
• Filed: 11/17/2010
• Published: 05/26/2011
• Est. Priority Date: 11/20/2009
• Status: Abandoned Application

• Current Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Original Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Inventors: HIGURASHI, Hitoshi, NAKAYAMADA, Noriaki
• Application Number:
  US12/948,178
• Publication Number:
  US 20110121208A1
• Time in Patent Office: Days
• US Class Current: 250/492.22
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01J 2237/30461 pre-calculated
• CPC Class Codes: H01J 2237/31776 Shaped beam
• CPC Class Codes: H01J 2237/31796 affecting resists
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography

Abstract

A charged particle beam drawing apparatus calculates a pattern area density distribution by using a central processing unit, calculates a dose distribution by using the central processing unit, calculates an irradiation amount distribution by using the central processing unit, performs a convolution calculation of the irradiation amount distribution and a fogging charged particle distribution by using a high speed processing unit, a processing speed of the high speed processing unit being higher than a processing speed of the central processing unit, calculates an irradiation time by using the central processing unit, calculates an elapsed time by using the central processing unit, calculates an electrical charging amount distribution by using the central processing unit, and performs a convolution calculation of the electrical charging amount distribution and a position deviation response function by using the high speed processing unit.

Claims

1. A charged particle beam drawing apparatus, comprising:

a drawing portion for drawing patterns corresponding to figures included in a drawing data, on a resist of a workpiece by applying a charged particle beam to the resist, the resist being applied to an upper surface of the workpiece;

a pattern area density distribution calculating portion for calculating a pattern area density distribution of patterns drawn by the charged particle beam;

a dose distribution calculating portion for calculating a dose distribution on the basis of the pattern area density distribution and a backscattering ratio of charged particles in the resist;

an irradiation amount distribution calculating portion for calculating an irradiation amount distribution, the irradiation amount distribution being a product of the pattern area density distribution by the dose distribution;

a fogging charged particle amount distribution calculating portion for performing a convolution calculation of the irradiation amount distribution and a fogging charged particle distribution;

an irradiation time calculating portion for calculating an irradiation time of the charged particle beam for drawing the patterns;

an elapsed time calculating portion for calculating an elapsed time;

an electrical charging amount distribution calculating portion for calculating an electrical charging amount distribution of the resist of the workpiece, the resist of the workpiece being electrically charged by an irradiation of the charged particle beam;

a position deviation amount map calculating portion for performing a convolution calculation of the electrical charging amount distribution and a position deviation response function;

a central processing unit used for a calculation in the pattern area density distribution calculating portion, a calculation in the dose distribution calculating portion, a calculation in the irradiation amount distribution calculating portion, a calculation in the irradiation time calculating portion, a calculation in the elapsed time calculating portion and a calculation in the electrical charging amount distribution calculating portion; and

a high speed processing unit used for the calculation in the fogging charged particle amount distribution calculating portion and the calculation in the position deviation amount map calculating portion, wherein a processing speed of the high speed processing unit is higher than a processing speed of the central processing unit.

2. The charged particle beam drawing apparatus according to claim 1, wherein the electrical charging amount distribution calculating portion calculates an electrical charging amount distribution map including a first electrical charging area and a second electrical charging area, size of each mesh in the second electrical charging area being larger than size of each mesh in the first electrical charging area,

wherein the high speed processing unit has a first processing unit and a second processing unit,

wherein the first processing unit is used for performing a first convolution calculation of an first electrical charging amount distribution and a first position deviation response function,

wherein size of each mesh of the first electrical charging amount distribution is equal to the size of each mesh in the first electrical charging area,

wherein the first position deviation response function corresponds to the first electrical charging area,

wherein the second processing unit is used for performing a second convolution calculation of an second electrical charging amount distribution and a second position deviation response function,

wherein size of each mesh of the second electrical charging amount distribution is equal to the size of each mesh in the second electrical charging area, and

wherein the second position deviation response function corresponds to the second electrical charging area.

3. The charged particle beam drawing apparatus according to claim 2, wherein the number of meshes in the first electrical charging area and the number of meshes in the second electrical charging area are approximately equal.

4. The charged particle beam drawing apparatus according to claim 1, wherein the high speed processing unit has a first processing unit and a second processing unit,

wherein the first processing unit is used for performing a first convolution calculation of the electrical charging amount distribution and a first position deviation response function for calculating a first component in x direction of a position deviation amount, and

wherein the second processing unit is used for performing a second convolution calculation of the electrical charging amount distribution and a second position deviation response function for calculating a second component in y direction of the position deviation amount.

5. The charged particle beam drawing apparatus according to claim 1, wherein the irradiation amount distribution calculating portion calculates a first irradiation amount distribution map and a second irradiation amount distribution map, size of each mesh in the second irradiation amount distribution map being larger than size of each mesh in the first irradiation amount distribution map,

wherein the fogging charged particle amount distribution calculating portion calculates the fogging charged particle distribution as a sum of a first Gaussian distribution and a second Gaussian distribution, a fogging scattering radius of the second Gaussian distribution being larger than a fogging scattering radius of the first Gaussian distribution,

wherein the high speed processing unit has a first processing unit and a second processing unit,

wherein the first processing unit is used for performing a first convolution calculation of an first irradiation amount distribution and the first Gaussian distribution,

wherein size of each mesh of the first irradiation amount distribution is equal to the size of each mesh in the first irradiation amount distribution map,

wherein the second processing unit is used for performing a second convolution calculation of an second irradiation amount distribution and the second Gaussian distribution, and

wherein size of each mesh of the second irradiation amount distribution is equal to the size of each mesh in the second irradiation amount distribution map.

6. An electrical charging effect correction method of a charged particle beam drawing apparatus for drawing patterns corresponding to figures included in a drawing data, on a resist of a workpiece by applying a charged particle beam to the resist, the resist being applied to an upper surface of the workpiece, comprising:

performing a calculation of a pattern area density distribution of patterns drawn by the charged particle beam, by using a central processing unit;

performing a calculation of a dose distribution on the basis of the pattern area density distribution and a backscattering ratio of charged particles in the resist, by using the central processing unit;

performing a calculation of an irradiation amount distribution by using the central processing unit, the irradiation amount distribution being a product of the pattern area density distribution by the dose distribution;

performing a convolution calculation of the irradiation amount distribution and a fogging charged particle distribution, by using a high speed processing unit, wherein a processing speed of the high speed processing unit is higher than a processing speed of the central processing unit;

performing a calculation of an irradiation time of the charged particle beam for drawing the patterns, by using the central processing unit;

performing a calculation of an elapsed time by using the central processing unit;

performing a calculation of an electrical charging amount distribution of the resist of the workpiece by using the central processing unit, the resist of the workpiece being electrically charged by an irradiation of the charged particle beam; and

performing a convolution calculation of the electrical charging amount distribution and a position deviation response function, by using the high speed processing unit.

7. The electrical charging effect correction method of the charged particle beam drawing apparatus according to claim 6, wherein when the calculation of the electrical charging amount distribution is performed, an electrical charging amount distribution map including a first electrical charging area and a second electrical charging area is calculated, size of each mesh in the second electrical charging area being larger than size of each mesh in the first electrical charging area,

wherein the high speed processing unit has a first processing unit and a second processing unit,

wherein the first processing unit is used for performing a first convolution calculation of an first electrical charging amount distribution and a first position deviation response function,

wherein size of each mesh of the first electrical charging amount distribution is equal to the size of each mesh in the first electrical charging area,

wherein the first position deviation response function corresponds to the first electrical charging area,

wherein the second processing unit is used for performing a second convolution calculation of an second electrical charging amount distribution and a second position deviation response function,

wherein size of each mesh of the second electrical charging amount distribution is equal to the size of each mesh in the second electrical charging area, and

wherein the second position deviation response function corresponds to the second electrical charging area.

8. The electrical charging effect correction method of the charged particle beam drawing apparatus according to claim 7, wherein the number of meshes in the first electrical charging area and the number of meshes in the second electrical charging area are approximately equal.

9. The electrical charging effect correction method of the charged particle beam drawing apparatus according to claim 6, wherein the high speed processing unit has a first processing unit and a second processing unit,

wherein the first processing unit is used for performing a first convolution calculation of the electrical charging amount distribution and a first position deviation response function for calculating a first component in x direction of a position deviation amount, and

wherein the second processing unit is used for performing a second convolution calculation of the electrical charging amount distribution and a second position deviation response function for calculating a second component in y direction of the position deviation amount.

10. The electrical charging effect correction method of the charged particle beam drawing apparatus according to claim 6, wherein when the calculation of the irradiation amount distribution is performed, a first irradiation amount distribution map and a second irradiation amount distribution map are calculated, size of each mesh in the second irradiation amount distribution map being larger than size of each mesh in the first irradiation amount distribution map,

wherein when the convolution calculation of the electrical charging amount distribution and the position deviation response function is performed, the fogging charged particle distribution is calculated as a sum of a first Gaussian distribution and a second Gaussian distribution, a fogging scattering radius of the second Gaussian distribution being larger than a fogging scattering radius of the first Gaussian distribution,

wherein the high speed processing unit has a first processing unit and a second processing unit,

wherein the first processing unit is used for performing a first convolution calculation of an first irradiation amount distribution and the first Gaussian distribution,

wherein size of each mesh of the first irradiation amount distribution is equal to the size of each mesh in the first irradiation amount distribution map,

wherein the second processing unit is used for performing a second convolution calculation of an second irradiation amount distribution and the second Gaussian distribution, and

wherein size of each mesh of the second irradiation amount distribution is equal to the size of each mesh in the second irradiation amount distribution map.