TRANSISTOR
First Claim
1. A transistor comprising:
- a first electrode formed over a substrate;
an oxide semiconductor film which is formed in contact with the first electrode and which has a reduced hydrogen concentration and a thickness of greater than 3 μ
m;
a second electrode formed in contact with the oxide semiconductor film;
a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode; and
a third electrode faces at least a side surface of the oxide semiconductor film with the gate insulating film provided therebetween.
1 Assignment
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Accused Products
Abstract
Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 micrometer, preferably greater than 3 micrometer, more preferably greater than or equal to 10 micrometer.
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Citations
20 Claims
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1. A transistor comprising:
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a first electrode formed over a substrate; an oxide semiconductor film which is formed in contact with the first electrode and which has a reduced hydrogen concentration and a thickness of greater than 3 μ
m;a second electrode formed in contact with the oxide semiconductor film; a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode; and a third electrode faces at least a side surface of the oxide semiconductor film with the gate insulating film provided therebetween. - View Dependent Claims (5, 9, 13, 17)
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2. A transistor comprising:
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a first electrode formed over a substrate; an oxide semiconductor film which is formed in contact with the first electrode and which has a reduced hydrogen concentration and a thickness of greater than 3 μ
m;a second electrode formed in contact with the oxide semiconductor film; a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode; and a third electrode faces at least a side surface of the oxide semiconductor film with the gate insulating film provided therebetween, wherein the oxide semiconductor film includes a crystal region in a region that is in contact with the gate insulating film. - View Dependent Claims (6, 10, 14, 18)
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3. A transistor comprising:
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a first electrode formed over a substrate; an oxide semiconductor film which is formed in contact with the first electrode and which has a reduced hydrogen concentration and a thickness of greater than 3 μ
m;a second electrode formed in contact with the oxide semiconductor film; a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode; and a third electrode faces at least a side surface of the oxide semiconductor film with the gate insulating film provided therebetween, wherein the oxide semiconductor film includes a crystal region in a region that is in contact with the gate insulating film and, wherein the first electrode functions as one of a source electrode and a drain electrode, wherein the second electrode functions as the other of a source electrode and a drain electrode, and wherein the third electrode functions as a gate electrode. - View Dependent Claims (7, 11, 15, 19)
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4. A transistor comprising:
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a first electrode formed over a substrate; an oxide semiconductor film which is formed in contact with the first electrode and which has a reduced hydrogen concentration and a thickness of greater than 3 μ
m;a second electrode formed in contact with the oxide semiconductor film; a gate insulating film covering the first electrode, the oxide semiconductor film, and the second electrode; and a third electrode faces at least a side surface of the oxide semiconductor film with the gate insulating film provided therebetween, wherein the oxide semiconductor film includes a crystal region in a region that is in contact with the gate insulating film wherein the first electrode functions as one of a source electrode and a drain electrode, wherein the second electrode functions as the other of a source electrode and a drain electrode, and wherein the third electrode functions as a gate electrode. - View Dependent Claims (8, 12, 16, 20)
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Specification