SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a first electrode over a substrate;
an oxide semiconductor film over and in electrical contact with the first electrode, the oxide semiconductor film having a thickness of greater than 3 μ
m;
a second electrode over and in electrical contact with the oxide semiconductor film;
a gate insulating film over the second electrode, the gate insulating film being in contact with an end portion of a top surface and a side surface of the oxide semiconductor film; and
a third electrode over the gate insulating film, the third electrode having an opening overlapping the second electrode,wherein the third electrode faces a side surface of the oxide semiconductor film and the end portion of the top surface of the oxide semiconductor film with the gate insulating film provided between the third electrode and the oxide semiconductor film.
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Accused Products
Abstract
Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor.
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Citations
27 Claims
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1. A semiconductor device comprising:
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a first electrode over a substrate; an oxide semiconductor film over and in electrical contact with the first electrode, the oxide semiconductor film having a thickness of greater than 3 μ
m;a second electrode over and in electrical contact with the oxide semiconductor film; a gate insulating film over the second electrode, the gate insulating film being in contact with an end portion of a top surface and a side surface of the oxide semiconductor film; and a third electrode over the gate insulating film, the third electrode having an opening overlapping the second electrode, wherein the third electrode faces a side surface of the oxide semiconductor film and the end portion of the top surface of the oxide semiconductor film with the gate insulating film provided between the third electrode and the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first electrode over a substrate; an oxide semiconductor film over and in electrical contact with the first electrode, the oxide semiconductor film having a thickness of greater than 3 μ
m;a second electrode over and in electrical contact with the oxide semiconductor film; a gate insulating film over the second electrode, the gate insulating film being in contact with an end portion of a top surface and a side surface of the oxide semiconductor film; and a third electrode over the gate insulating film, the third electrode having an opening overlapping the second electrode, wherein a third electrode faces a side surface of the oxide semiconductor film and the end portion of the top surface of the oxide semiconductor film with the gate insulating film provided between the third electrode and the oxide semiconductor film; and an interlayer insulating film over the third electrode. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a first electrode over a substrate; an oxide semiconductor film over and in electrical contact with the first electrode, the oxide semiconductor film having a thickness of greater than 3 μ
m;a second electrode over and in electrical contact with the oxide semiconductor film; a gate insulating film having a first opening over the second electrode, the gate insulating film being in contact with an end portion of a top surface and a side surface of the oxide semiconductor film; a third electrode over the gate insulating film, the third electrode having a second opening overlapping the second electrode, wherein the third electrode faces a side surface of the oxide semiconductor film and the end portion of the top surface of the oxide semiconductor film with the gate insulating film provided between the third electrode and the oxide semiconductor film; an interlayer insulating film over the third electrode, the interlayer insulating film having a third opening; and a wiring over the interlayer insulating film, the wiring being electrically connected to the second electrode through the first opening, the second opening and the third opening. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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Specification