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THIN FILM TRANSISTOR

  • US 20110121289A1
  • Filed: 11/19/2010
  • Published: 05/26/2011
  • Est. Priority Date: 11/20/2009
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a gate electrode;

    a gate insulating film adjacent to the gate electrode;

    an oxide semiconductor film adjacent to the gate electrode with the gate insulating film interposed therebetween;

    a titanium oxide film formed on the oxide semiconductor film; and

    a titanium film formed on the titanium oxide film,wherein the oxide semiconductor film contains at least one of indium, gallium, and zinc.

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