DISPLAY DEVICE
First Claim
1. A display device comprising:
- a substrate;
a pixel portion including a single-gate transistor, the single-gate transistor comprising;
a first gate electrode over the substrate;
a gate insulating layer over the first gate electrode;
a first semiconductor layer over the gate insulating layer, the first semiconductor layer comprising;
a first microcrystalline semiconductor region over the gate insulating layer; and
a first amorphous semiconductor region over the first microcrystalline semiconductor region,a pair of first wirings over the first amorphous semiconductor region; and
an insulating layer over the pair of first wirings and the first amorphous semiconductor region,a driver circuit including a dual-gate transistor, the dual-gate transistor comprising;
a second gate electrode over the substrate;
the gate insulating layer over the second gate electrode;
a second semiconductor layer over the gate insulating layer, the second semiconductor layer comprising;
a second microcrystalline semiconductor region over the gate insulating layer; and
a pair of second amorphous semiconductor regions over the second microcrystalline semiconductor region,a pair of second wirings over the pair of second amorphous semiconductor regions;
the insulating layer over the pair of second wirings and the second microcrystalline semiconductor region; and
a back gate electrode over the insulating layer.
1 Assignment
0 Petitions
Accused Products
Abstract
An object is to provide a display device whose frame can be narrowed and whose display characteristics are excellent. The display device includes a driver circuit and a pixel portion. The driver circuit and the pixel portion are formed using a dual-gate thin film transistor and a single-gate thin film transistor, respectively. In the dual-gate thin film transistor in the display device, a semiconductor layer is formed using a microcrystalline semiconductor region and a pair of amorphous semiconductor regions, and a gate insulating layer and an insulating layer are in contact with the microcrystalline semiconductor region of the semiconductor layer.
62 Citations
18 Claims
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1. A display device comprising:
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a substrate; a pixel portion including a single-gate transistor, the single-gate transistor comprising; a first gate electrode over the substrate; a gate insulating layer over the first gate electrode; a first semiconductor layer over the gate insulating layer, the first semiconductor layer comprising; a first microcrystalline semiconductor region over the gate insulating layer; and a first amorphous semiconductor region over the first microcrystalline semiconductor region, a pair of first wirings over the first amorphous semiconductor region; and an insulating layer over the pair of first wirings and the first amorphous semiconductor region, a driver circuit including a dual-gate transistor, the dual-gate transistor comprising; a second gate electrode over the substrate; the gate insulating layer over the second gate electrode; a second semiconductor layer over the gate insulating layer, the second semiconductor layer comprising; a second microcrystalline semiconductor region over the gate insulating layer; and a pair of second amorphous semiconductor regions over the second microcrystalline semiconductor region, a pair of second wirings over the pair of second amorphous semiconductor regions; the insulating layer over the pair of second wirings and the second microcrystalline semiconductor region; and a back gate electrode over the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A display device comprising:
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a substrate; a pixel portion including a single-gate transistor, the single-gate transistor comprising; a first gate electrode over the substrate; a gate insulating layer over the first gate electrode; a first semiconductor layer over the gate insulating layer, the first semiconductor layer comprising; a first microcrystalline semiconductor region over the gate insulating layer; and a first amorphous semiconductor region over the first microcrystalline semiconductor region, a pair of first wirings over the first amorphous semiconductor region; and an insulating layer over the pair of first wirings and the first amorphous semiconductor region, a driver circuit including a dual-gate transistor, the dual-gate transistor comprising; a second gate electrode over the substrate; the gate insulating layer over the second gate electrode; a second semiconductor layer over the gate insulating layer, the second semiconductor layer comprising; a second microcrystalline semiconductor region over the gate insulating layer; and a pair of second amorphous semiconductor regions over the second microcrystalline semiconductor region, a pair of second wirings over the pair of second amorphous semiconductor regions; the insulating layer over the pair of second wirings and the second microcrystalline semiconductor region; and a back gate electrode over the insulating layer, wherein the first gate electrode is wider than the first microcrystalline semiconductor region and the first amorphous semiconductor region. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A display device comprising:
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a substrate; a pixel portion including a single-gate transistor, the single-gate transistor comprising; a first gate electrode over the substrate; a gate insulating layer over the first gate electrode; a first semiconductor layer over the gate insulating layer, the first semiconductor layer comprising; a first microcrystalline semiconductor region over the gate insulating layer; and a first amorphous semiconductor region over the first microcrystalline semiconductor region, a pair of first wirings over the first amorphous semiconductor region; and an insulating layer over the pair of first wirings and the first amorphous semiconductor region, a driver circuit including a dual-gate transistor, the dual-gate transistor comprising; a second gate electrode over the substrate; the gate insulating layer over the second gate electrode; a second semiconductor layer over the gate insulating layer, the second semiconductor layer comprising; a second microcrystalline semiconductor region over the gate insulating layer; and a pair of second amorphous semiconductor regions over the second microcrystalline semiconductor region, a pair of second wirings over the pair of second amorphous semiconductor regions; the insulating layer over the pair of second wirings and the second microcrystalline semiconductor region; and a back gate electrode over the insulating layer, wherein the second gate electrode is electrically connected to the back gate electrode. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification