LED with Improved Injection Efficiency
First Claim
1. A light emitting device comprising:
- a p-type semiconductor layer comprising a p-type semiconductor material;
an n-type semiconductor layer comprising an n-type semiconductor material; and
an active layer sandwiched between said p-type and n-type semiconductor layers, said active layer emitting light when holes from said p-type semiconductor layer combine with electrons from said n-type semiconductor layer therein, said active layer comprising a plurality of sub-layers, said active layer having a plurality of pits in which side surfaces of a plurality of said sub-layers are in contact with said p-type semiconductor material such that holes from said p-type semiconductor material are injected into those sub-layers through said exposed side surfaces without passing through another sub-layer.
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Accused Products
Abstract
A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.
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Citations
12 Claims
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1. A light emitting device comprising:
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a p-type semiconductor layer comprising a p-type semiconductor material; an n-type semiconductor layer comprising an n-type semiconductor material; and an active layer sandwiched between said p-type and n-type semiconductor layers, said active layer emitting light when holes from said p-type semiconductor layer combine with electrons from said n-type semiconductor layer therein, said active layer comprising a plurality of sub-layers, said active layer having a plurality of pits in which side surfaces of a plurality of said sub-layers are in contact with said p-type semiconductor material such that holes from said p-type semiconductor material are injected into those sub-layers through said exposed side surfaces without passing through another sub-layer. - View Dependent Claims (2, 3, 4, 5)
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6. A method for fabricating a light emitting device comprising:
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growing an epitaxial n-type semiconductor layer on a substrate; growing an active layer comprising a plurality of sub-layers on said n-type semiconductor layer under growth conditions that cause pits to form in said active layer, a plurality of said sub-layers having sidewalls that are bounded by said pits; etching said active layer to expose sidewalls of said sub-layers in said pits; growing an epitaxial p-type semiconductor layer over said active layer such that said p-type semiconductor layer extends into said pits and contacts said sidewalls of said sub-layers; and providing contacts for applying a potential difference between said p-type semiconductor layer and said n-type semiconductor layer. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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Specification