Gas-sensitive semiconductor device

• US 20110121368A1
• Filed: 09/23/2010
• Published: 05/26/2011
• Est. Priority Date: 10/08/2009
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Martin, Alexander, Kunz, Denis, Widenmeyer, Markus
• Granted Patent: US 8,513,711 B2
• Time in Patent Office: Days
• US Class Current: 257/253
• CPC Class Codes: G01N 27/4141 specially adapted for gases

Abstract

A gas-sensitive semiconductor device having a semiconductive channel (10) which is delimited by a first (12) and a second (14) channel electrode, and having a gate electrode (16) which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel (10) occurs as a response to an action of a gas. The gate electrode (16) and/or a gate insulation layer (20) which insulates the gate electrode from the channel, and/or a gate stack layer (18) which may be provided between the gate electrode and the channel have/has two surface sections (22, 24) which differ in their sensitivity to gases.

Claims

1. A gas-sensitive semiconductor device having a semiconductive channel which is delimited by a first and a second channel electrode, and having a gate electrode which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel occurs as a response to an action of a gas, wherein at least one of the gate electrode and a gate insulation layer which insulates the gate electrode from the channel has two surface sections which differ in their sensitivity to gases.

2. The device as recited in claim 1, wherein at least one of the gate electrode, the gate insulation layer and a gate stack layer which may be provided between the gate electrode and the channel has two surface sections which differ in their sensitivity to gases.

3. The device as recited in claim 2, wherein the semiconductor device is a semiconductor component in the form of a field effect transistor (FET), the channel electrodes implementing the drain and the source of the FET.

4. The device as recited in claim 3, wherein the FET is a CHEMFET.

5. The device as recited in claim 2, wherein the flat gate electrode is divided into two regions which are made of different materials and which correspond to the two surface sections, a region junction of the regions being situated between the channel electrodes.

6. The device as recited in claim 5, wherein the region junction is situated transverse to a direction of extension of the channel.

7. The device as recited in claim 3, wherein the flat gate electrode is divided into two regions which are made of different materials and which correspond to the two surface sections, a region junction of the regions being situated between the channel electrodes.

8. The device as recited in claim 2, wherein for implementing the two surface sections the gate electrode contains different metals or metal platings.

9. The device as recited in claim 3, wherein for implementing the two surface sections the gate electrode contains different metals or metal platings.

10. The device as recited in claim 5, wherein for implementing the two surface sections the gate electrode contains different metals or metal platings.

11. The device as recited in claim 2, wherein one of the two surface sections of the gate electrode has a gas-tight metal plating.

12. The device as recited in claim 3, wherein one of the two surface sections of the gate electrode has a gas-tight metal plating.

13. The device as recited in claim 5, wherein one of the two surface sections of the gate electrode has a gas-tight metal plating.

14. The device as recited in claim 2, wherein at least one of the surface sections of the gate electrode has a nanoporous or catalytically active plating.

15. The device as recited in claim 2, wherein the gate electrode has a porous metal plating, and for implementing the two surface sections the gate stack electrode contains different surface materials.

16. The device as recited in claim 2, which further includes means for adjusting the working point by applying a first electrical voltage having a first polarity in a first operating mode between the first and the second channel electrode, the means being designed for adjusting the working point for the controlled application of a second electrical voltage having a second polarity opposite the first polarity in a second operating mode.

17. The device as recited in claim 3, which further includes means for adjusting the working point by applying a first electrical voltage having a first polarity in a first operating mode between the first and the second channel electrode, the means being designed for adjusting the working point for the controlled application of a second electrical voltage having a second polarity opposite the first polarity in a second operating mode.

18. The device as recited in claim 5, which further includes means for adjusting the working point by applying a first electrical voltage having a first polarity in a first operating mode between the first and the second channel electrode, the means being designed for adjusting the working point for the controlled application of a second electrical voltage having a second polarity opposite the first polarity in a second operating mode.

19. The device as recited in claim 16, which further includes electronic evaluation means for detecting operating signals of the semiconductor device in the first and the second operating modes, and for comparing these operating signals or forming a difference between these operating signals.

20. The device as recited in claim 19, wherein the operating signals are channel currents flowing during operation.