FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGIONS AND METHOD OF FABRICATION
First Claim
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1. A transistor comprising:
- a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate;
a gate electrode formed on the gate dielectric layer;
a pair of source/drain regions on opposite sides of the gate electrode, said pair of source/drain regions comprising a semiconductor film having a bandgap of less than 0.75 eV, wherein the semiconductor film extends directly beneath the gate dielectric layer.
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Abstract
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.
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Citations
10 Claims
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1. A transistor comprising:
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a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate; a gate electrode formed on the gate dielectric layer; a pair of source/drain regions on opposite sides of the gate electrode, said pair of source/drain regions comprising a semiconductor film having a bandgap of less than 0.75 eV, wherein the semiconductor film extends directly beneath the gate dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification