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FIELD EFFECT TRANSISTOR WITH NARROW BANDGAP SOURCE AND DRAIN REGIONS AND METHOD OF FABRICATION

  • US 20110121393A1
  • Filed: 02/04/2011
  • Published: 05/26/2011
  • Est. Priority Date: 02/23/2005
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a gate dielectric layer formed on a silicon-on-insulator (SOI) substrate;

    a gate electrode formed on the gate dielectric layer;

    a pair of source/drain regions on opposite sides of the gate electrode, said pair of source/drain regions comprising a semiconductor film having a bandgap of less than 0.75 eV, wherein the semiconductor film extends directly beneath the gate dielectric layer.

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