SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- an antenna;
a battery supplying power supply voltage;
a demodulation circuit connected to the antenna;
a power control circuit connected to the demodulation circuit; and
a signal processing portion connected to the demodulation circuit, the power control circuit, and the battery,wherein the signal processing portion comprises a transistor, andwherein a channel formation region of the transistor comprises an oxide semiconductor with a hydrogen concentration of lower than or equal to 5×
1019 atoms/cm3.
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Accused Products
Abstract
An object is to achieve low power consumption and a long lifetime of a semiconductor device having a wireless communication function. The object can be achieved in such a manner that a battery serving as a power supply source and a specific circuit are electrically connected to each other through a transistor in which a channel formation region is formed using an oxide semiconductor. The hydrogen concentration of the oxide semiconductor is lower than or equal to 5×1019 (atoms/cm3). Therefore, leakage current of the transistor can be reduced. As a result, power consumption of the semiconductor device in a standby state can be reduced. Further, the semiconductor device can have a long lifetime.
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Citations
18 Claims
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1. A semiconductor device comprising:
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an antenna; a battery supplying power supply voltage; a demodulation circuit connected to the antenna; a power control circuit connected to the demodulation circuit; and a signal processing portion connected to the demodulation circuit, the power control circuit, and the battery, wherein the signal processing portion comprises a transistor, and wherein a channel formation region of the transistor comprises an oxide semiconductor with a hydrogen concentration of lower than or equal to 5×
1019 atoms/cm3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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an antenna; a battery supplying power supply voltage; a timer regularly outputting a signal; a power control circuit connected to the timer; and a signal processing portion connected to the timer, the power control circuit, and the battery, wherein the signal processing portion comprises a transistor, and wherein a channel formation region of the transistor comprises an oxide semiconductor with a hydrogen concentration of lower than or equal to 5×
1019 atoms/cm3. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification