MODULATION CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
First Claim
1. A modulation circuit comprising:
- a load; and
a transistor comprising an oxide semiconductor layer,wherein hydrogen concentration of the oxide semiconductor layer is less than or equal to 5×
1019/cm3, andwherein an off-state current of the transistor is less than or equal to 1×
10−
13 A.
1 Assignment
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Accused Products
Abstract
A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.
25 Citations
15 Claims
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1. A modulation circuit comprising:
-
a load; and a transistor comprising an oxide semiconductor layer, wherein hydrogen concentration of the oxide semiconductor layer is less than or equal to 5×
1019/cm3, andwherein an off-state current of the transistor is less than or equal to 1×
10−
13 A. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
-
an antenna; and a modulation circuit comprising; a load; and a transistor comprising an oxide semiconductor layer, wherein one of a source and a drain of the transistor is electrically connected to one terminal of the antenna through the load, and the other of the source and the drain of the transistor is electrically connected to the other terminal of the antenna, wherein hydrogen concentration of the oxide semiconductor layer is less than or equal to 5×
1019/cm3, andwherein an off-state current of the transistor is less than or equal to 1×
10−
13 A. - View Dependent Claims (6, 7, 8, 9)
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10. A semiconductor device comprising:
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an antenna; and a modulation circuit comprising; a load; a transistor comprising an oxide semiconductor layer; and a diode, wherein one of a source and a drain of the transistor is electrically connected to one terminal of the antenna through the load and the diode and the other of the source and the drain of the transistor is electrically connected to the other terminal of the antenna, wherein hydrogen concentration of the oxide semiconductor layer is less than or equal to 5×
1019/cm3, andwherein an off-state current of the transistor is less than or equal to 1×
10−
13 A. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification