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SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL

  • US 20110122673A1
  • Filed: 11/22/2010
  • Published: 05/26/2011
  • Est. Priority Date: 11/24/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a memory cell, the memory cell including a first transistor and a second transistor,wherein the first transistor comprises a first semiconductor layer, a first gate electrode, a first source electrode, and a first drain electrode,wherein the second transistor comprises a second semiconductor layer, a second gate electrode, a second source electrode, and a second drain electrode,wherein the second semiconductor layer includes an oxide semiconductor material,wherein one of the second source electrode and the second drain electrode is electrically connected to the first gate electrode, andwherein charge accumulated in the first gate electrode is discharged by irradiating the second semiconductor layer with an ultraviolet light.

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