VOLTAGE COMPENSATION CIRCUIT, MULTI-LEVEL MEMORY DEVICE WITH THE SAME, AND VOLTAGE COMPENSATION METHOD FOR READING THE MULTI-LEVEL MEMORY DEVICE

• US 20110122684A1
• Filed: 12/31/2009
• Published: 05/26/2011
• Est. Priority Date: 11/20/2009
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Sheu, Shyh-Shyuan, Chiang, Pei-Chia, Lin, Chih-He, Lin, Wen-Pin
• Granted Patent: US 8,040,723 B2
• Time in Patent Office: Days
• US Class Current: 365/163
• CPC Class Codes: G11C 11/5678 using amorphous/crystalline phase transition storage elements
• CPC Class Codes: G11C 11/5685 using storage elements comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0004 comprising amorphous/crystalline phase transition cells
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0038 Power supply circuits
• CPC Class Codes: G11C 13/004 Reading or sensing circuits or methods
• CPC Class Codes: G11C 13/0061 Timing circuits or methods
• CPC Class Codes: G11C 2013/0054 Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
• CPC Class Codes: G11C 2211/5634 Reference cells
• CPC Class Codes: G11C 7/14 Dummy cell management; Sense reference voltage generators

Abstract

A voltage compensation circuit, a multi-level memory device with the same, and a voltage compensation method for reading the multi-level memory device are provided. When a memory cell is read, a reference voltage applied to the memory device is adjusted according to variation of characteristics of a drift resistance of a reference cell. The increased value of the reference voltage (i.e. a voltage difference) corresponds to a resistance variation caused by a drift condition. The drift compensation mechanism is adaptive to a compensation circuit of a read driver of the memory device, which can compensate variation of the voltage level when data is read from the memory cell. When the resistance drift occurs, a drift amount is calculated and is added to the reference voltage, in order to avoid the error in judgement caused by the resistance drift when the stored data is read out.

Claims

1. A memory device, comprising:

at least one data cell, for storing multi-level data;

at least one reference cell, for providing a reference voltage;

a pair of bit lines, corresponding to the data cell, wherein the pair of bit lines comprises a data bit line and a reference bit line, and the data bit line is connected to the data cell; and

a compensation circuit, connected to the reference cell, the reference cell providing information of resistance varied along with time, and the compensation circuit generating a compensation voltage according to the information provided by the reference cell to apply to the reference voltage, thereby a result as the stored data of the data cell is sensed according to the reference voltage compensated by the compensation voltage.

2. The memory device as claimed in claim 1, further comprising a sensor amplifier circuit, connected to the data bit line and the reference bit line, to sense voltages of the data bit line and the reference bit line, wherein the voltage of the reference bit line is the reference voltage compensated by the compensation voltage, the sensor amplifier circuit outputs the result as the stored data of the data cell.

3. The memory device as claimed in claim 1, wherein the compensation voltage is generated according to the resistance varied along with time of the reference cell, in which a mapping relationship exists between the resistance varied and the generated compensation voltage.

4. The memory device as claimed in claim 1, wherein the compensation circuit comprises:

a first current mirror, having a source terminal coupled to the reference cell, and a mapping terminal coupled to a comparison terminal, for mapping a current flowing through the reference cell to the mapping terminal to generate a first current;

a second current mirror, having a source terminal coupled to a reference voltage control switch, for generating a second current when the reference voltage control switch is turned on; and

a third current mirror, having a source terminal coupled to a mapping terminal of the second current mirror for connecting a third current generated by mapping the second current, and a mapping terminal coupled to the comparison terminal for generating a fourth current, wherein the fourth current is the reference current and is coupled to the comparison terminal, the comparison terminal is used for controlling the voltage compensation switch, when the first current is less than the reference current, the voltage compensation switch is turned on, and a voltage difference is compensated to the reference voltage on the reference bit line corresponding to the selected data cell.

5. The memory device as claimed in claim 1, wherein the data cells are phase change memory cells.

6. The memory device as claimed in claim 1, wherein the data cells are flash memory cells.

7. The memory device as claimed in claim 1, wherein the data cells are resistive random access memory (RRAM) cells.

8. The memory device as claimed in claim 1, further comprising an address decoder for receiving an address signal, and performing decoding according to the address signal, so as to select the data cell and the reference cell.

9. The memory device as claimed in claim 1, wherein the reference voltage is an external voltage plus the compensation voltage.

10. The memory device as claimed in claim 1, further comprising a control circuit for receiving a control signal to serve as a basis of starting an operation of accessing the data cell.

15. The voltage compensation circuit as claimed in claim 9, wherein the data cells are RRAM memory cells.

11. A voltage compensation circuit, adapted to a read device of a multi-level memory device, wherein the multi-level memory device comprises a plurality of data cells for storing multi-level data, wherein stored data of each of the data cells is read by comparing a reference voltage, and the read device comprises a plurality of reference cells, the voltage compensation circuit comprising:

a first current mirror, having a source terminal coupled to one of the reference cells, and a mapping terminal coupled to a comparison terminal, to map a current flowing through the reference cell to the mapping terminal to generate a first current;

a second current mirror, having a source terminal coupled to a reference voltage control switch, to generate a second current when the reference voltage control switch is turned on; and

a third current mirror, having a source terminal coupled to a mapping terminal of the second current mirror to connect a third current generated by mapping the second current, and a mapping terminal coupled to the comparison terminal generating a fourth current for coupling to the comparison terminal, wherein the comparison terminal is used for controlling a voltage compensation switch, when the first current is less than the fourth current, the voltage compensation switch is turned on, and a voltage difference is compensated to a reference voltage corresponding to the data cell to be read.

12. The voltage compensation circuit as claimed in claim 11, wherein when the voltage difference is compensated to the reference voltage, in case that a resistance of the reference cell is increased along with time, a current variation generated when the reference cell is conducted is compared to the fourth current to turn on the voltage compensation switch, so as to perform a voltage compensation.

13. The voltage compensation circuit as claimed in claim 11, wherein the data cells are phase change memory cells.

14. The voltage compensation circuit as claimed in claim 11, wherein the data cells are flash memory cells.

16. A voltage compensation method for reading a multi-level memory device, wherein the multi-level memory device comprises a plurality of data cells for storing multi-level data, wherein stored data of each of the data cells is read by comparing a reference voltage, and the read device comprises a plurality of reference cells, voltage compensation method for reading the multi-level memory device comprising:

providing a power supply to activate the multi-level memory device to perform reading;

selecting one of the data cells to read stored data, and correspondingly selecting one of the reference cells;

mapping a current passing through the reference cell to generate a first current for coupling to a comparison terminal;

turning on a reference voltage control switch to generate a second current when the reading is to be performed; and

mapping the second current to generate a third current, and mapping the third current to generate a fourth current for coupling to the comparison terminal, wherein the comparison terminal is coupled to a voltage compensation switch, and when the first current is less than the fourth current, the voltage compensation switch is turned on, and a voltage difference is compensated to a reference voltage corresponding to the data cell to be read.

17. The voltage compensation method for reading the multi-level memory device as claimed in claim 16, wherein when the voltage difference is compensated to the reference voltage, in case that a resistance of the reference cell is increased along with time, a current variation generated when the reference cell is conducted is compared to the fourth current to turn on the voltage compensation switch, so as to perform a voltage compensation.

18. The voltage compensation method for reading the multi-level memory device as claimed in claim 16, further comprising receiving a control signal to serve as a basis of starting an operation of accessing the data cell.