SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD
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Accused Products
Abstract
A substrate processing apparatus includes an evacuatable process chamber configured to receive a substrate carrier having at least one substrate, a plasma generating module, a gas feed, a gas discharge and a vapor etching module provided in the process chamber. A substrate processing method includes introducing a substrate carrier including at least one substrate into an evacuatable process chamber, generating a plasma in a plasma process using a plasma generating module in a gas or a gas mixture, performing a vapor etching of the at least one substrate before, after or alternatingly with the plasma process and performing at least one of a coating, etching, surface modification and cleaning of the substrate.
198 Citations
49 Claims
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1-24. -24. (canceled)
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25. A continuous substrate processing apparatus comprising:
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at least one evacuatable process chamber configured to receive at least one substrate carrier having at least one substrate; a plasma generating module; at least one gas feed; at least one gas discharge; and a vapor etching module disposed in the process chamber. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A substrate processing method comprising:
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introducing at least one substrate carrier including at least one substrate into at least one evacuatable process chamber; generating a plasma in a plasma process using a plasma generating module in a gas or a gas mixture so as to provide at least one of a coating, etching, surface modification and cleaning of the substrate; performing a vapor etching of the at least one substrate before, after or alternatingly with the plasma process. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49)
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Specification