PROCESS FOR FORMING COBALT-CONTAINING MATERIALS

• US 20110124192A1
• Filed: 01/26/2011
• Published: 05/26/2011
• Est. Priority Date: 04/11/2006
• Status: Abandoned Application

• Current Assignee: Kevin Moraes, Mei Chiang, Sang-Ho Yu, Schubert S. Chu, See-Eng Phan, Seshadri Ganguli
• Original Assignee: Kevin Moraes, Mei Chiang, Sang-Ho Yu, Schubert S. Chu, See-Eng Phan, Seshadri Ganguli
• Inventors: Moraes, Kevin, Chu, Schubert S., Yu, Sang-Ho, Chang, Mei, Phan, See-Eng, Ganguli, Seshadri
• Application Number:
  US13/014,656
• Publication Number:
  US 20110124192A1
• Time in Patent Office: Days
• US Class Current: 438/653
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/42 Silicides
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/02057 Cleaning during device manufacture
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/02068 during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations
• CPC Class Codes: H01L 21/76855 After-treatment introducing at least one additional element into the layer
• CPC Class Codes: H01L 21/76864 Thermal treatment

Abstract

Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.

Claims

1. A method of forming a copper material on a substrate, sequentially comprising:

exposing the substrate to an argon plasma during a plasma cleaning process;

depositing a tantalum nitride layer over the substrate by physical vapor deposition;

depositing a cobalt layer having a thickness within a range from about 10 angstroms to about 100 angstroms over the substrate during a chemical vapor deposition process, wherein the substrate is exposed to dicobalt hexacarbonyl butylacetylene or cyclopentadienyl cobalt bis(carbonyl) during the chemical vapor deposition process; and

depositing a copper layer over the substrate during an electrochemical plating process.

2. The method of claim 1, further comprising performing an etching process after the depositing a copper layer.

3. The method of claim 1, wherein the argon plasma is generated at a power setting between about 500 watts and about 2000 watts.

4. The method of claim 3, wherein the cobalt layer has a thickness within a range from about 40 angstroms to about 50 angstroms.

5. The method of claim 1, further comprising exposing at least one of the titanium nitride layer or the cobalt layer to a plasma treatment process.

6. The method of claim 1, further comprising depositing a tantalum layer prior to depositing the tantalum nitride layer.

7. The method of claim 6, wherein the depositing a copper layer comprises:

depositing a copper seed layer by physical vapor deposition; and

depositing a copper bulk layer on the copper seed layer by electrochemical plating.

8. The method of claim 1, wherein the exposing the substrate to an argon plasma comprises cyclically generating a plasma from argon and purging the argon from a process chamber.

9. A method of forming a copper material on a substrate, sequentially comprising:

exposing the substrate to an argon plasma;

depositing a tantalum nitride layer over the substrate by atomic layer deposition, wherein the tantalum nitride layer is formed by reacting pentakis(dimethylamino)tantalum and a nitrogen-containing precursor;

depositing a cobalt layer having a thickness within a range from about 20 angstroms to about 70 angstroms over the substrate during a chemical vapor deposition process, wherein the substrate is exposed to dicobalt hexacarbonyl butylacetylene during the chemical vapor deposition process; and

depositing a copper layer over the substrate during an electrochemical plating process.

10. The method of claim 9, wherein the cobalt layer is deposited during a plasma-enhanced chemical vapor deposition process.

11. The method of claim 9, wherein depositing the copper layer comprises:

depositing a copper seed layer by physical vapor deposition; and

depositing a copper bulk layer on the copper seed layer by electrochemical plating.

12. The method of claim 9, further comprising performing an etching process after the depositing a copper layer.

13. The method of claim 9, wherein the nitrogen-containing precursor is ammonia.

14. The method of claim 9, wherein the substrate is exposed to the argon plasma for about 30 seconds to about 4 minutes, and wherein the plasma is generated at a power setting between about 900 watts and about 1800 watts.