RECTIFIER CIRCUIT, POWER SUPPLY CIRCUIT, AND SEMICONDUCTOR DEVICE

• US 20110127338A1
• Filed: 02/08/2011
• Published: 06/02/2011
• Est. Priority Date: 11/29/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: SHIONOIRI, Yutaka
• Granted Patent: US 8,050,070 B2
• Time in Patent Office: Days
• US Class Current: 235/492
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0817 Thyristors only
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components

Abstract

It is an object of the present invention to provide a rectifier circuit that can suppress deterioration or dielectric breakdown of a semiconductor element due to excessive current. A rectifier circuit of the present invention includes at least a first capacitor, a second capacitor, and a diode which are sequentially connected in series in a path which connects an input terminal and one of two output terminals, and a transistor. The second capacitor is connected between one of a source region and a drain region and a gate electrode of the transistor. Further, the other one of the source region and the drain region and the other one of two output terminals are connected each other.

Claims

1. A semiconductor device comprising:

a first capacitor;

a second capacitor;

a transistor; and

a diode,

wherein the first capacitor, the second capacitor, and the diode are connected in series in that order between an input terminal and a first output terminal,

wherein the second capacitor is connected between one of source and drain regions and a gate electrode of the transistor, and

wherein the other one of the source and drain regions of the transistor is connected to a second output terminal.

2. The semiconductor device according to claim 1, wherein the transistor is an n-channel type, and the one of the source and drain regions of the transistor is connected to a cathode of the diode.

3. The semiconductor device according to claim 1, wherein the transistor is a p-channel type, and the one of the source and drain regions of the transistor is connected to an anode of the diode.

4. The semiconductor device according to claim 1, wherein the diode is a transistor in which source or drain region is connected to a gate electrode.

5. The semiconductor device according to claim 1, further comprising a memory.

6. The semiconductor device according to claim 1,

wherein the semiconductor device is configured to be wrapped in a packing material together with a product, and

wherein the semiconductor device is configured to store part of an information of the product.

7. A semiconductor device comprising:

a first capacitor;

a second capacitor;

a third capacitor;

a transistor; and

a diode,

wherein the first capacitor, the second capacitor, and the diode are connected in series in that order between an input terminal and a first output terminal,

wherein the second capacitor is connected between one of source and drain regions and a gate electrode of the transistor,

wherein the other one of the source and drain regions of the transistor is connected to a second output terminal, and

wherein the third capacitor is connected between the first and second output terminals.

8. The semiconductor device according to claim 7, wherein the transistor is an n-channel type, and the one of the source and drain regions of the transistor is connected to a cathode of the diode.

9. The semiconductor device according to claim 7, wherein the transistor is a p-channel type, and the one of the source and drain regions of the transistor is connected to an anode of the diode.

10. The semiconductor device according to claim 7, wherein the diode is a transistor in which source or drain region is connected to a gate electrode.

11. The semiconductor device according to claim 7, further comprising a memory.

12. The semiconductor device according to claim 7,

wherein the semiconductor device is configured to be wrapped in a packing material together with a product, and

wherein the semiconductor device is configured to store part of an information of the product.

13. A semiconductor device comprising:

a first capacitor;

a second capacitor;

a third capacitor;

a transistor;

a diode; and

a resistor,

wherein the first capacitor, the second capacitor, and the diode are connected in series in that order between an input terminal and a first output terminal,

wherein the second capacitor is connected between one of source and drain regions and a gate electrode of the transistor,

wherein the other one of the source and drain regions of the transistor is connected to a second output terminal,

wherein the third capacitor is connected between the first and second output terminals, and

wherein the resistor is connected between the gate electrode of the transistor and the first or second output terminal.

14. The semiconductor device according to claim 13, wherein the transistor is an n-channel type, and the one of the source and drain regions of the transistor is connected to a cathode of the diode.

15. The semiconductor device according to claim 13, wherein the transistor is a p-channel type, and the one of the source and drain regions of the transistor is connected to an anode of the diode.

16. The semiconductor device according to claim 13, wherein the diode is a transistor in which source or drain region is connected to a gate electrode.

17. The semiconductor device according to claim 13, further comprising a memory.

18. The semiconductor device according to claim 13,

wherein the semiconductor device is configured to be wrapped in a packing material together with a product, and

wherein the semiconductor device is configured to store part of an information of the product.