METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device that comprisesa first transistor that comprises a first source electrode, a first drain electrode, a first semiconductor film, and a first gate electrode, and that is formed on a substrate, anda second transistor that comprises a second source electrode, a second drain electrode, a second semiconductor film, and a second gate electrode electrically connected to the first gate electrode, and that is formed on the substrate, the method comprising:
- a step of forming a first gate electrode at which the first gate electrode is formed on the substrate;
a step of forming a first source-drain electrode at which the first source electrode and the first drain electrode are formed;
a step of forming a first semiconductor film at which the first semiconductor film is formed by using an oxide semiconductor material;
a step of forming a second gate electrode at which the second gate electrode is formed on the substrate;
a step of forming a second source-drain electrode at which the second source electrode and the second drain electrode are formed; and
a step of forming a second semiconductor film at which the second semiconductor film is formed by using an organic semiconductor material.
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Abstract
In a method for manufacturing a semiconductor device comprising an n-type transistor (Q1) that has a source electrode (4ns), a drain electrode (4d), an oxide semiconductor film (5), and a gate electrode (2), and that is formed on a substrate (1), and a p-type transistor (Q2) that has a source electrode (4ps), a drain electrode, an organic semiconductor film (7), and a gate electrode, and that is formed on the substrate, the gate electrode is formed on the substrate, the source electrode and the drain electrode are formed, the oxide semiconductor film is formed of an oxide semiconductor material; and the gate electrode is formed on the substrate, the source electrode and the drain electrode are formed, and the organic semiconductor film is formed of an organic semiconductor material.
20 Citations
9 Claims
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1. A method for manufacturing a semiconductor device that comprises
a first transistor that comprises a first source electrode, a first drain electrode, a first semiconductor film, and a first gate electrode, and that is formed on a substrate, and a second transistor that comprises a second source electrode, a second drain electrode, a second semiconductor film, and a second gate electrode electrically connected to the first gate electrode, and that is formed on the substrate, the method comprising: -
a step of forming a first gate electrode at which the first gate electrode is formed on the substrate; a step of forming a first source-drain electrode at which the first source electrode and the first drain electrode are formed; a step of forming a first semiconductor film at which the first semiconductor film is formed by using an oxide semiconductor material; a step of forming a second gate electrode at which the second gate electrode is formed on the substrate; a step of forming a second source-drain electrode at which the second source electrode and the second drain electrode are formed; and a step of forming a second semiconductor film at which the second semiconductor film is formed by using an organic semiconductor material. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device:
- comprising a first transistor and a second transistor formed on a single substrate,
the first transistor comprising a first gate electrode, a first source electrode, a first drain electrode, and a first semiconductor film formed between the first source electrode and the first drain electrode and made of an oxide semiconductor, and the second transistor comprising a second gate electrode electrically connected to the first gate electrode, a second source electrode, a second drain electrode, and a second semiconductor film formed between the second source electrode and the second drain electrode and made of an organic semiconductor. - View Dependent Claims (8, 9)
- comprising a first transistor and a second transistor formed on a single substrate,
Specification
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- Resources
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Current AssigneeSumitomo Chemical Company Limited
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Original AssigneeSumitomo Chemical Company Limited
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InventorsMatsumuro, Tomonori
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Application NumberUS13/055,808Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current257/43CPC Class CodesH01L 27/1214 comprising a plurality of T...H01L 27/1225 with semiconductor material...H01L 27/1229 with different crystal prop...H01L 29/7869 having a semiconductor body...H10K 10/466 Lateral bottom-gate IGFETs ...H10K 19/10 comprising field-effect tra...H10K 71/12 using liquid deposition, e....
