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SILICON-ON-INSULATOR (SOI) STRUCTURE CONFIGURED FOR REDUCED HARMONICS AND METHOD OF FORMING THE STRUCTURE

  • US 20110127529A1
  • Filed: 11/30/2009
  • Published: 06/02/2011
  • Est. Priority Date: 11/30/2009
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprise:

  • a semiconductor substrate having a given conductivity type, a first surface and a second surface above said first surface, said semiconductor substrate comprising;

    a first portion adjacent to said first surface and comprising, in a first concentration, a dopant having said given conductivity type; and

    a second portion extending from said first portion to said second surface, said second portion comprising, in a second concentration greater than said first concentration, any of the following;

    a same dopant as in said first portion,a different dopant than in said first portion, said different dopant having said given conductivity type, anda combination of said same dopant and said different dopant; and

    an insulator layer adjacent to said second surface.

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