DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE

• US 20110127537A1
• Filed: 07/23/2009
• Published: 06/02/2011
• Est. Priority Date: 07/30/2008
• Status: Abandoned Application

• Current Assignee: Sumitomo Chemical Company Limited
• Original Assignee: Sumitomo Chemical Company Limited
• Inventors: Matsumuro, Tomonori
• Application Number:
  US13/056,082
• Publication Number:
  US 20110127537A1
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/125 including organic TFTs [OTFT]
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

A display device comprises: a wiring layer (2) connected to a power source and formed between a substrate (1) and semiconductor elements (21, 22) and between the substrate (1) and an organic EL element (24) such that a region in which the organic EL element (24) is disposed is within the wiring layer (2) as viewed in the thickness direction of the substrate; an interlayer insulating film (3) disposed between the wiring layer and the semiconductor elements (21, 22) and between the wiring layer and the organic EL element, the interlayer insulating film comprising a contact hole (4a) formed therein; and a contact hole wiring (4) that is formed in the contact hole and electrically connects the wiring layer to at least one of source electrodes (8a, 8d), drain electrodes (8b, 8c), and the anode electrode (12) of the organic EL element.

Claims

1. A display device, comprising:

a semiconductor element comprising a gate electrode, a source electrode, a drain electrode, and a semiconductor film formed between the source electrode and the drain electrode;

a light-emitting element comprising electrodes and electrically connected to the semiconductor element;

a substrate on which the semiconductor element and the light-emitting element are disposed;

a wiring layer connected to a power source, the wiring layer being formed between the substrate and the semiconductor element and between the substrate and the light-emitting element such that a region in which the light-emitting element is disposed is within the wiring layer as viewed in a thickness direction of the substrate;

an interlayer insulating film disposed between the wiring layer and the semiconductor element and between the wiring layer and the light-emitting element, the interlayer insulating film comprising a contact hole formed therein; and

a contact hole wiring formed in the contact hole and electrically connecting the wiring layer and at least one of the source electrode, the drain electrode, and the electrodes of the light-emitting element.

2. The display device according to claim 1, wherein the wiring layer is formed of a metal material or a conductive oxide material.

3. The display device according to claim 1, wherein the semiconductor film is formed of an inorganic oxide semiconductor material.

4. The display device according to claim 1, wherein the semiconductor film is formed of an organic semiconductor material.

5. The display device according to claim 1, wherein the light-emitting element is an organic electroluminescent element.

6. The display device according to claim 1, wherein the wiring layer comprises an extending region extending outwardly from an entire circumference of the region in which the light-emitting element is disposed, as viewed in the thickness direction of the substrate.

7. A method for manufacturing a display device that comprises

semiconductor elements each including a gate electrode, a source electrode, a drain electrode, and a semiconductor film formed between the source electrode and the drain electrode,

light-emitting elements each including electrodes and electrically connected to a corresponding one of the plurality of semiconductor elements, and

a substrate on which the semiconductor elements and the light-emitting elements are disposed,

the method comprising:

forming the wiring layer on the substrate, the wiring layer being connected to a power source and formed such that a region in which the light-emitting elements are to be disposed is within the wiring layer as viewed in a thickness direction of the substrate;

forming an interlayer insulating film on a side opposite to the substrate side with respect to the wiring layer;

forming a contact hole wiring that passes through the interlayer insulating film, the contact hole wiring being electrically connected at one end thereof to the wiring layer;

forming the source electrode and the drain electrode on a side opposite to the substrate side with respect to the interlayer insulating film; and

forming the plurality of light emitting elements;

wherein

at least one of the electrodes of each of the plurality of light-emitting elements, the source electrode, and the drain electrode is formed so as to be electrically connected to another end of the contact hole wiring.