SOLID STATE LIGHT EMITTER WITH PHOSPHORS DISPERSED IN A LIQUID OR GAS FOR PRODUCING HIGH CRI WHITE LIGHT

• US 20110127555A1
• Filed: 07/21/2010
• Published: 06/02/2011
• Est. Priority Date: 12/02/2009
• Status: Abandoned Application

• Current Assignee: ABL IP Holding LLC (Acuity Brands, Inc.)
• Original Assignee: Renaissance Lighting Incorporated (Acuity Brands, Inc.)
• Inventors: RAINS, Jack C. JR., Ramer, David P.
• Application Number:
  US12/840,807
• Publication Number:
  US 20110127555A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/501 characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A solid state white light emitting device includes a semiconductor chip for producing electromagnetic energy and may additionally include a reflector forming an optical integrating cavity. Phosphors, such as semiconductor nanophosphors dispersed in a light transmissive liquid or gas material, within the chip packaging of the solid state device itself, are excitable by the energy from the chip. The device produces output light that is at least substantially white and has a color rendering index (CRI) of 75 or higher. The white light output of the device may exhibit color temperature in one of the following specific ranges along the black body curve: 2,725±145° Kelvin; 3,045±175° Kelvin; 3,465±245° Kelvin; 3,985±275° Kelvin; 4,503±243° Kelvin; 5,028±283° Kelvin; 5,665±355° Kelvin; and 6,530±510° Kelvin.

Claims

1. A solid state light emitting device, comprising:

a semiconductor chip for producing electromagnetic energy;

a package enclosing the semiconductor chip and configured to allow emission of light as an output of the device; and

a plurality of semiconductor nanophosphors dispersed in a light transmissive liquid or gas contained within the package, each of the semiconductor nanophosphors having a respective absorption spectrum encompassing an emission spectrum of the semiconductor chip for re-emitting visible light of a different spectrum, for together producing visible light in the output of the device when the semiconductor nanophosphors are excited by electromagnetic energy from the semiconductor chip,

wherein;

(a) the visible light output produced during the excitation of the semiconductor nanophosphors is at least substantially white;

(b) the visible light output produced during the excitation of the semiconductor nanophosphors has a color rendering index (CRI) of 75 or higher; and

(c) the visible light output produced during the excitation of the semiconductor nanophosphors has a color temperature in one of the following ranges;

2,725±

145°

Kelvin;

3,045±

175°

Kelvin;

3,465±

245°

Kelvin;

3,985±

275°

Kelvin;

4,503±

243°

Kelvin;

5,028±

283°

Kelvin;

5,665±

355°

Kelvin; and

6,530±

510°

Kelvin.

2. The solid state light emitting device of claim 1, wherein:

the absorption spectrum of each of the semiconductor nanophosphors has an upper limit of approximately 460 nm or below, and

the plurality of semiconductor nanophosphors comprises;

a doped semiconductor nanophosphor of a type for re-emitting orange light;

a doped semiconductor nanophosphor of a type for re-emitting blue light; and

a doped semiconductor nanophosphor of a type for re-emitting green light.

3. The solid state light emitting device of claim 2, wherein each of the doped semiconductor nanophosphors being of a type excited in response to near UV electromagnetic energy in the range of 380-420 nm for re-emitting visible light of a different spectrum having substantially no overlap with absorption spectra of the doped semiconductor nanophosphors, for together producing visible light in the output of the device when the doped semiconductor nanophosphors are excited by near UV electromagnetic energy from the semiconductor chip.

4. The solid state light emitting device of claim 2, wherein the re-emitted visible light has substantially no overlap with absorption spectra of the semiconductor nanophosphors.

5. The solid state light emitting device of claim 2, wherein the plurality of doped semiconductor nanophosphors further comprises a doped semiconductor nanophosphor of a type excited for re-emitting yellowish-green or greenish-yellow light.

6. The solid state light emitting device of claim 2, wherein the visible light output produced during the near UV excitation of the doped semiconductor nanophosphors has a CRI of at least 80.

7. The solid state light emitting device of claim 1, wherein:

the absorption spectrum of each of the semiconductor nanophosphors has an upper limit of approximately 460 nm or below, and

the plurality of semiconductor nanophosphors comprises;

a doped semiconductor nanophosphor of a type for re-emitting red light;

a doped semiconductor nanophosphor of a type for re-emitting green light; and

a doped semiconductor nanophosphor of a type for re-emitting blue light.

8. The light fixture of claim 6, wherein the plurality of doped semiconductor nanophosphors further comprises a doped semiconductor nanophosphor of a type excited for re-emitting yellow light.

9. The light fixture of claim 7, wherein the visible light output produced during the excitation of the doped semiconductor nanophosphors has a CRI of at least 88.

10. The solid state light emitting device of claim 1, wherein the semiconductor chip is configured for producing electromagnetic energy of a wavelength in the range of 460 nm or below.

11. The solid state light emitting device of claim 1, further comprising:

at least one reflective surface within the package forming an optical integrating cavity;

wherein the semiconductor chip is positioned and oriented so that at least substantially all direct emissions from the semiconductor chip reflect at least once within the cavity.

12. The solid state light emitting device of claim 11, wherein the at least one reflective surface is diffusely reflective.

13. The solid state light emitting device of claim 11, wherein

a containment member is configured to contain the liquid or gas such that the liquid or gas fills at least a substantial portion of the optical integrating cavity;

and

a light transmissive surface of the containment member forms an optical aperture.

14. The solid state light emitting device of claim 13, wherein the semiconductor chip is positioned and oriented relative to the container which contains the liquid or gas, so that any electromagnetic energy reaching the surface of the container forming the optical aperture, directly from the semiconductor chip, impacts the optical aperture at a sufficiently small angle as to be reflected back into the optical integrating cavity by total internal reflection at the optical aperture.

15. The solid state light emitting device of claim 14, wherein:

the plurality of semiconductor nanophosphors are dispersed in light transmissive liquid, and the liquid is an oil or alcohol.

16. The solid state light emitting device of claim 14, wherein:

the plurality of doped semiconductor nanophosphors are dispersed in light transmissive gas, and the light transmissive gas consists essentially of a gas or a combination of gases selected from the group consisting of;

an inert gas, a hydrocarbon gas, hydrogen gas and nitrogen gas.

17. The solid state light emitting device of claim 1, wherein the liquid or gas is substantially color-neutral.

18. A solid state light emitting device, comprising:

a semiconductor chip for producing electromagnetic energy;

a package enclosing the semiconductor chip;

at least one reflective surface forming an optical integrating cavity within the package, wherein the semiconductor chip is positioned and oriented so that at least substantially all direct emissions from the semiconductor chip reflect at least once within the cavity;

a light transmissive gas or liquid material and a containment member configured to contain the material within the package such that the light transmissive material fills at least a substantial portion of the optical integrating cavity, a surface of a containment member forming an optical aperture to allow emission of light from the cavity for a light output of the device; and

a plurality of phosphors dispersed in the light transmissive gas or liquid material, each of the phosphors having a respective absorption spectrum encompassing an emission spectrum of the semiconductor chip for re-emitting visible light of a different spectrum, for together producing visible light in the output of the device when the phosphors are excited by electromagnetic energy from the semiconductor chip, wherein;

(a) the visible light output produced during the excitation of the phosphors is at least substantially white; and

(b) the visible light output produced during the excitation of the phosphors has a color rendering index (CRI) of 75 or higher.

19. The solid state light emitting device of claim 18, wherein the phosphors in the device comprise a plurality of semiconductor nanophosphors.

20. The solid state light emitting device of claim 19, wherein emissions of the semiconductor nanophosphors cause the visible light output of the device to have a color temperature in one of the following ranges:

2,725±

145°

Kelvin;

3,045±

175°

Kelvin;

3,465±

245°

Kelvin;

3,985±

275°

Kelvin;

4,503±

243°

Kelvin;

5,028±

283°

Kelvin;

5,665±

355°

Kelvin; and

6,530±

510°

Kelvin.

21. The solid state light emitting device of claim 18, wherein the semiconductor chip is positioned and oriented relative to the containment member so that any electromagnetic energy reaching the surface of the containment member forming the optical aperture, directly from the semiconductor chip, impacts the optical aperture at a sufficiently small angle as to be reflected back into the optical integrating cavity by total internal reflection at the optical aperture.

22. The solid state light emitting device of claim 21, wherein the at least one reflective surface is diffusely reflective.

23. The solid state light emitting device of claim 18, wherein the light transmissive material is an oil or alcohol.

24. The solid state light emitting device of claim 18, wherein the light transmissive material is a gas or a combination of gases selected from the group consisting of:

an inert gas, a hydrocarbon gas, hydrogen gas, and nitrogen gas.