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Latch-up free vertical TVS diode array structure using trench isolation

  • US 20110127577A1
  • Filed: 02/01/2011
  • Published: 06/02/2011
  • Est. Priority Date: 11/30/2006
  • Status: Abandoned Application
First Claim
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1. A transient voltage suppressing (TVS) array disposed on a semiconductor substrate supporting an epitaxial layer of a first conductivity type wherein said TVS array further comprising:

  • a plurality of isolation trenches opened in said epitaxial layer with a body region of a second conductivity type in said epitaxial layer between two of said trenches; and

    a Zener doped region in said body region of said first conductivity type for constituting a Zener diode comprising vertically stacked PN junctions for carrying a transient current for suppressing a transient voltage.

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