STACKED OXIDE MATERIAL, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE

• US 20110127579A1
• Filed: 11/22/2010
• Published: 06/02/2011
• Est. Priority Date: 11/28/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei
• Granted Patent: US 8,765,522 B2
• Time in Patent Office: Days
• US Class Current: 257/192
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02483 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/16 the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78609 for preventing leakage current H01L29/78618 takes precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: Y10T 156/10 Methods of surface bonding and/or assembly therefor
• CPC Class Codes: Y10T 428/265 1 mil or less
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming a first oxide component over a base component, causing crystal growth which proceeds from a surface toward an inside of the first oxide component by first heat treatment to form a first oxide crystal component at least partly in contact with the base component, forming a second oxide component over the first oxide crystal component; and causing crystal growth by second heat treatment using the first oxide crystal component as a seed to form a second oxide crystal component.

Claims

1. A method for manufacturing a stacked oxide material, comprising the steps of:

forming a first oxide component over a base component;

causing crystal growth which proceeds from a surface toward an inside of the first oxide component by first heat treatment to form a first oxide crystal component at least partly in contact with the base component;

forming a second oxide component over the first oxide crystal component; and

causing crystal growth by second heat treatment using the first oxide crystal component as a seed to form a second oxide crystal component.

2. The method for manufacturing a stacked oxide material, according to claim 1, wherein the first oxide crystal component has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof.

3. The method for manufacturing a stacked oxide material, according to claim 1, wherein the first oxide component has a thickness of greater than or equal to 2 nm and less than or equal to 15 nm.

4. A method for manufacturing a stacked oxide material, comprising the steps of:

forming an oxide component over a base component;

causing crystal growth which proceeds from a surface toward an inside of the oxide component by heat treatment to form a first oxide crystal component at least partly in contact with the base component; and

stacking a second oxide crystal component over the first oxide crystal component.

5. The method for manufacturing a stacked oxide material, according to claim 4,

wherein the first oxide crystal component is c-axis-aligned perpendicularly to a surface thereof,

wherein the second oxide crystal component is c-axis-aligned, and

wherein c-axis of the second oxide crystal component is aligned with that of the first oxide crystal component.

6. The method for manufacturing a stacked oxide material, according to claim 4, wherein each of the first oxide crystal component and the second oxide crystal component is a crystal which is c-axis-aligned perpendicularly to a surface thereof.

7. The method for manufacturing a stacked oxide material, according to claim 4, wherein the heat treatment is performed in a nitrogen atmosphere, an oxygen atmosphere, or a dry air atmosphere at a temperature higher than or equal to 450°

C. and lower than or equal to 850°

C.

8. The method for manufacturing a stacked oxide material, according to claim 4,

wherein the stacked oxide material includes a region overlapping with a step of the base component, and

wherein the region includes a grain boundary.

9. The method for manufacturing a stacked oxide material, according to claim 4, wherein each of the first oxide crystal component and the second oxide crystal component is a single crystal.

10. The method for manufacturing a stacked oxide material, according to claim 4, wherein the second oxide crystal component is obtained by causing crystal growth in a state where heating is performed at a temperature during deposition of higher than or equal to 200°

C. and lower than or equal to 600°

C.

11. The method for manufacturing a stacked oxide material, according to claim 4,

wherein the second oxide crystal component is deposited by a sputtering method,

wherein heat treatment is performed after or at the same time as the deposition of the second oxide crystal component,

wherein a metal oxide target for the deposition has a composition ratio of In:

Ga;

Zn=1;

x;

y, and

wherein x is greater than or equal to 0 and less than or equal to 2, and y is greater than or equal to 1 and less than or equal to 5.

12. The method for manufacturing a stacked oxide material, according claim 11, wherein x is 1 and y is 1.

13. The method for manufacturing a stacked oxide material, according claim 11, wherein x is 0 and y is 1.

14. The method for manufacturing a stacked oxide material, according to claim 4, wherein the first oxide crystal component has high purity and has an intrinsic conductivity type.

15. The method for manufacturing a stacked oxide material, according to claim 4, wherein the second oxide crystal component has high purity and has an intrinsic conductivity type.

16. The method for manufacturing a stacked oxide material, according to claim 4, wherein a carrier concentration of the stacked oxide material is less than 1.0×

10¹² cm<sup>−

3</sup>.

17. The method for manufacturing a stacked oxide material, according to claim 4, wherein a carrier concentration of the stacked oxide material is less than 1.45×

10¹⁰ cm<sup>−

3</sup>.

18. The method for manufacturing a stacked oxide material, according to claim 4, wherein the first oxide crystal component has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof.

19. The method for manufacturing a stacked oxide material, according to claim 4, wherein the oxide component has a thickness of greater than or equal to 2 nm and less than or equal to 15 nm.

20. A stacked oxide material comprising:

a first oxide crystal component whose crystal growth proceeded from a surface to an inside of the first oxide crystal component, over and at least partly in contact with a base component; and

a second oxide crystal component over the first oxide crystal component.

21. The stacked oxide material according to claim 20, wherein the first oxide crystal component has an a-b plane along the surface and is c-axis-aligned perpendicularly to the surface.

22. The stacked oxide material according to claim 20, wherein the first oxide crystal component and the second oxide crystal component each have an a-b plane along a surface thereof and are c-axis-aligned perpendicularly to the surface thereof.

23. The stacked oxide material according to claim 20, wherein the base component includes an insulator surface, an oxide surface, a nitride surface, or a metal surface.

24. The stacked oxide material according to claim 20, wherein the first oxide crystal component and the second oxide crystal component are formed using materials including same components.

25. The stacked oxide material according to claim 20, wherein the first oxide crystal component has an average thickness of greater than or equal to 2 nm and less than or equal to 10 nm.

26. The stacked oxide material according to claim 20, wherein the first oxide crystal component and the second oxide crystal component have a same electron affinity.

27. The stacked oxide material according to claim 20, wherein the first oxide crystal component and the second oxide crystal component are formed using different materials.

28. A stacked oxide material comprising:

a first oxide crystal component over and at least partly in contact with a base component; and

a second oxide crystal component over and in contact with the first oxide crystal component,

wherein the first oxide crystal component and the second oxide crystal component have a same crystal axes.

29. The stacked oxide material according to claim 28, wherein the first oxide crystal component has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof.

30. The stacked oxide material according to claim 28, wherein the first oxide crystal component and the second oxide crystal component each have an a-b plane along a surface thereof and are c-axis-aligned perpendicularly to the surface thereof.

31. The stacked oxide material according to claim 28, wherein the base component includes an insulator surface, an oxide surface, a nitride surface, or a metal surface.

32. The stacked oxide material according to claim 28, wherein the first oxide crystal component and the second oxide crystal component are formed using materials including same components.

33. The stacked oxide material according to claim 28, wherein the first oxide crystal component has an average thickness of greater than or equal to 2 nm and less than or equal to 10 nm.

34. The stacked oxide material according to claim 28, wherein the first oxide crystal component and the second oxide crystal component have a same electron affinity.

35. The stacked oxide material according to claim 28, wherein the first oxide crystal component and the second oxide crystal component are formed using different materials.

36. A stacked oxide material comprising:

a first oxide crystal component over and at least partly in contact with a base component; and

a second oxide crystal component over and in contact with the first oxide crystal component,

wherein the first oxide crystal component and the second oxide crystal component are one single crystal.

37. The stacked oxide material according to claim 36, wherein the first oxide crystal component has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof.

38. The stacked oxide material according to claim 36, wherein the first oxide crystal component and the second oxide crystal component each have an a-b plane along a surface thereof and are c-axis-aligned perpendicularly to the surface thereof.

39. The stacked oxide material according to claim 36, wherein the base component includes an insulator surface, an oxide surface, a nitride surface, or a metal surface.

40. The stacked oxide material according to claim 36, wherein the first oxide crystal component and the second oxide crystal component are formed using materials including same components.

41. The stacked oxide material according to claim 36, wherein the first oxide crystal component has an average thickness of greater than or equal to 2 nm and less than or equal to 10 nm.

42. The stacked oxide material according to claim 36, wherein the first oxide crystal component and the second oxide crystal component have a same electron affinity.

43. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer including a flat surface over a surface of a base;

forming a gate insulating layer over the gate electrode layer;

forming a first oxide semiconductor layer over the gate insulating layer;

causing crystal growth which proceeds from a surface toward an inside of the first oxide semiconductor layer by first heat treatment to form a first single crystal layer;

forming a second oxide semiconductor layer over the first single crystal layer;

causing crystal growth which proceeds from the first single crystal layer toward a surface of the second oxide semiconductor layer thereover by second heat treatment to form a second single crystal layer; and

forming a source electrode layer and a drain electrode layer over a stack of the first single crystal layer and the second single crystal layer.

44. The method for manufacturing a semiconductor device, according to claim 43,

wherein the source electrode layer or the drain electrode layer overlaps with an edge portion and a portion of the flat surface of the gate electrode layer.

45. The method for manufacturing a semiconductor device, according to claim 43, wherein the first single crystal layer has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof.

46. The method for manufacturing a semiconductor device, according to claim 43,

wherein the second single crystal layer has an a-b plane in a surface thereof and is c-axis-aligned perpendicularly to the surface thereof.

47. The method for manufacturing a semiconductor device, according to claim 43, wherein the second oxide semiconductor layer has a larger thickness than the first oxide semiconductor layer.

48. The method for manufacturing a semiconductor device, according to claim 43, wherein the first oxide semiconductor layer and the second oxide semiconductor layer have a same electron affinity.

49. The method for manufacturing a semiconductor device, according to claim 43, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are formed using different materials.

50. A semiconductor device comprising:

a gate electrode layer including a flat surface over a surface of a base;

a gate insulating layer over the gate electrode layer;

a first single crystal layer which is over and at least partly in contact with the gate insulating layer, has an a-b plane along a surface thereof and c-axis-aligned perpendicularly to the surface thereof

a second single crystal layer which is over and in contact with the first single crystal layer, has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof; and

a source electrode layer and a drain electrode layer over a stack of the first single crystal layer and the second single crystal layer,

wherein the first single crystal layer and the second single crystal layer are metal oxide layers.

51. The semiconductor device according to claim 50, wherein the second single crystal layer has a larger thickness than the first single crystal layer.

52. The semiconductor device according to claim 50, wherein the first single crystal layer and the second single crystal layer have a same electron affinity.

53. The semiconductor device according to claim 50, wherein the first single crystal layer and the second single crystal layer are formed using different materials.

54. The semiconductor device according to claim 50, wherein a difference in height at a region in the surface of the second single crystal layer which overlaps with the gate electrode layer is less than or equal to 1 nm.

55. The semiconductor device according to claim 50, wherein a difference in height at a region in the surface of the second single crystal layer which overlaps with the gate electrode layer is less than or equal to 0.2 nm.

56. The semiconductor device according to claim 50, wherein the first single crystal layer and the second single crystal layer are one single crystal.

57. A semiconductor device comprising:

a gate electrode layer including a flat surface over a surface of a base;

a gate insulating layer over the gate electrode layer;

a first single crystal layer which is over and at least partly in contact with the gate insulating layer, has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof;

a second single crystal layer which is on and in contact with the first single crystal layer, has an a-b plane along a surface thereof and is c-axis-aligned perpendicularly to the surface thereof; and

a source electrode layer and a drain electrode layer over a stack of the first single crystal layer and the second single crystal layer,

wherein the source electrode layer or the drain electrode layer is provided so as to overlap with a portion of the flat surface of the gate electrode layer.

58. The semiconductor device according to claim 57, wherein the second single crystal layer has a larger thickness than the first single crystal layer.

59. The semiconductor device according to claim 57, wherein the first single crystal layer and the second single crystal layer have a same electron affinity.

60. The semiconductor device according to claim 57, wherein the first single crystal layer and the second single crystal layer are formed using different materials.

61. The semiconductor device according to claim 57, wherein a difference in height at a region in the surface of the second single crystal layer which overlaps with the gate electrode layer is less than or equal to 1 nm.

62. The semiconductor device according to claim 57, wherein a difference in height at a region in the surface of the second single crystal layer which overlaps with the gate electrode layer is less than or equal to 0.2 nm.

63. The semiconductor device according to claim 57, wherein the first single crystal layer and the second single crystal layer are one single crystal.