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MEMORY STRUCTURE HAVING VOLATILE AND NON-VOLATILE MEMORY PORTIONS

  • US 20110127596A1
  • Filed: 02/11/2011
  • Published: 06/02/2011
  • Est. Priority Date: 03/20/2008
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a fin field-effect transistor (finFET) comprising;

    a first gate configured to switchably receive a first signal that is configured to turn on the finFET;

    a second gate configured to switchably receive a second signal that is configured to turn on the finFET,wherein the first gate is coupled to a non-volatile memory.

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