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Semiconductor Devices and Methods for Making the Same

  • US 20110127601A1
  • Filed: 12/02/2009
  • Published: 06/02/2011
  • Est. Priority Date: 12/02/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate heavily doped with a dopant of a first conductivity type;

    an epitaxial layer on the substrate, the epitaxial layer being lightly doped with a dopant of a first conductivity type with a concentration gradient;

    a trench formed in the epitaxial layer, the trench containing a sidewall that is lightly doped with a dopant of a second conductivity type, a first insulating region in a lower portion of the trench and a second insulating region in an upper portion of the trench, the first and second insulating regions sandwiching a conductive or semiconductive layer;

    a source layer contacting the upper surface of the epitaxial layer and the upper surface of the second insulating region; and

    a drain contacting a bottom portion of the substrate.

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