TRANSFORMER
First Claim
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1. A transformer comprising:
- a semiconductor substrate comprising a first conductivity type semiconductor layer;
a semiconductor layer coil comprising a semiconductor layer coil wiring composed of a second conductivity type semiconductor layer laminated on a surface side of the first conductivity type semiconductor layer;
a trench coil connected with the semiconductor layer coil in parallel;
a coil insulating layer laminated on the surface side of the first conductivity type semiconductor layer, covering over both of the semiconductor layer coil and the trench coil; and
a metal layer coil arranged on a surface of the coil insulating layer,wherein a trench is formed in the first conductivity type semiconductor layer,each of the semiconductor layer coil wiring and the trench has a spiral shape,the trench and the semiconductor layer coil wiring are alternately disposed in the radial direction thereof,the trench coil comprises (a) a trench insulating film arranged on an inner surface of the trench, and (b) a trench coil wiring composed of a conductive layer disposed within the trench and covered by the trench insulating film, andthe metal layer coil opposes both of the semiconductor layer coil and the trench coil.
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Accused Products
Abstract
A transformer may include a semiconductor layer coil, a trench coil connected with the semiconductor layer coil in parallel, and a metal layer coil opposing both of the semiconductor layer coil and the trench coil. The semiconductor layer coil and the trench coil may be insulated from the metal layer coil by an insulating layer.
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Citations
9 Claims
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1. A transformer comprising:
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a semiconductor substrate comprising a first conductivity type semiconductor layer; a semiconductor layer coil comprising a semiconductor layer coil wiring composed of a second conductivity type semiconductor layer laminated on a surface side of the first conductivity type semiconductor layer; a trench coil connected with the semiconductor layer coil in parallel; a coil insulating layer laminated on the surface side of the first conductivity type semiconductor layer, covering over both of the semiconductor layer coil and the trench coil; and a metal layer coil arranged on a surface of the coil insulating layer, wherein a trench is formed in the first conductivity type semiconductor layer, each of the semiconductor layer coil wiring and the trench has a spiral shape, the trench and the semiconductor layer coil wiring are alternately disposed in the radial direction thereof, the trench coil comprises (a) a trench insulating film arranged on an inner surface of the trench, and (b) a trench coil wiring composed of a conductive layer disposed within the trench and covered by the trench insulating film, and the metal layer coil opposes both of the semiconductor layer coil and the trench coil. - View Dependent Claims (2, 3)
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4. An apparatus comprising:
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a first coil; a second coil magnetically connected to the first coil; a transmitter circuit electrically connected to one of the first and second coils; and a receiver circuit electrically connected to another of the first and second coils, wherein the first coil comprises a semiconductor layer coil and a trench coil connected with the semiconductor layer coil in parallel, the semiconductor layer coil comprises a semiconductor layer coil wiring composed of a semiconductor layer, the trench coil comprises a trench coil wiring composed of a conductive layer and a trench insulating film covering the trench coil wiring, each of the semiconductor layer coil wiring and the trench coil wiring has a spiral shape, the trench coil wiring and the semiconductor layer coil wiring are alternately disposed in a radial direction thereof, and the second coil comprises a metal layer coil opposing both of the semiconductor layer coil and the trench coil. - View Dependent Claims (5, 6, 7, 8, 9)
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Specification