SYSTEMS AND METHODS FOR DISTRIBUTING GAS IN A CHEMICAL VAPOR DEPOSITION REACTOR

• US 20110129621A1
• Filed: 03/26/2009
• Published: 06/02/2011
• Est. Priority Date: 03/26/2008
• Status: Active Grant

• Current Assignee: OCI Company Limited (OCI Holdings Co. Ltd.)
• Original Assignee: GT Solar, Incorporated
• Inventors: Qin, Wenjun
• Granted Patent: US 8,961,689 B2
• Time in Patent Office: Days
• US Class Current: 427/585
• CPC Class Codes: C01B 33/035 by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C30B 28/12 directly from the gas state

Abstract

Systems and methods for the production of polysilicon or another material via chemical vapor deposition in a reactor are provided in which gas is distributed using a silicon standpipe. The silicon standpipe can be attached to the reactor system using a nozzle coupler such that precursor gases may be injected to various portions of the reaction chamber. As a result, gas flow can be improved throughout the reactor chamber, which can increase the yield of polysilicon, improve the quality of polysilicon, and reduce the consumption of energy.

Claims

1. A reactor system, comprising:

a reaction chamber including at least a base plate fixed within the reaction chamber and an enclosure operably connected to the base plate;

at least one filament attached to the base plate;

an electrical current source for supplying a current to the at least one filament;

a gas source operably connected to the reaction chamber to allow a gas flow through the reaction chamber; and

a standpipe operably connected to the gas source for injecting the gas flow into the reaction chamber.

2. The reactor system of claim 1, wherein the current is supplied directly to the filament through an electrical feedthrough in the base plate.

3. The reactor system of claim 1, wherein the reaction chamber further comprises a viewing port for viewing an internal portion of the reaction chamber.

4. The reactor system of claim 1, wherein the standpipe is made of silicon.

5. The reactor system of claim 1, further comprising at least one additional standpipe received in the reaction chamber.

6. The reactor system of claim 1, wherein the standpipe is configured to receive deposits of polysilicon in the reaction chamber.

7. The reactor system of claim 1, wherein the standpipe further comprises a nozzle coupler and a pipe body, the nozzle coupler for connecting with the gas source.

8. The reactor system of claim 7, wherein a diameter of the pipe body is selected based on at least a desired gas flow rate.

9. The reactor system of claim 7, wherein the nozzle coupler further comprises a gasket for sealing the standpipe to the gas source.

10. The reactor system of claim 1, wherein the reactor system is a chemical vapor deposition reactor system.

11. The reactor system of claim 1, further comprising a cooling system having at least a fluid inlet and a fluid outlet operably connected to the reactor system.

12. A method for depositing a material in a reactor, comprising the steps of:

providing a reaction chamber including at least a base plate fixed within the reaction chamber and an enclosure operably connected to the base plate;

attaching at least one filament to the base plate;

connecting an electrical current source to the reaction chamber for supplying a current to the filament;

connecting a gas source to the reaction chamber to a allow gas through the reaction chamber;

connecting a standpipe to the gas source for distributing a gas flow within the reaction chamber; and

operating the reactor to deposit the material on the at least one filament in the reaction chamber.

13. The method of claim 12, wherein the material deposited on the filament is polysilicon.

14. The method of claim 12, wherein the filament comprises silicon.

15. The method of claim 12, wherein the reactor is a chemical vapor deposition reactor.

16. The method of claim 12, further comprising the step of:

supplying the current directly to the filament through an electrical feedthrough in the base plate.

17. The method of claim 12, wherein the reaction chamber further comprises a viewing port for viewing an internal portion of the reaction chamber.

18. The method of claim 12, wherein the standpipe is made of silicon.

19. A reaction chamber, comprising:

at least a base plate fixed within the reaction chamber;

at least one filament attached to the base plate, the reaction chamber being operably connected to an electrical current source and a gas source to allow deposition of a material on the at least one filament; and

a standpipe operably attached to the gas source for distributing a gas flow within the reaction chamber.

20. The reaction chamber of claim 19, wherein a current is supplied to the filament by the electrical current source.

21. The reaction chamber of claim 20, wherein the current is supplied directly to the filament through an electrical feedthrough in the base plate.

22. The reaction chamber of claim 19, further comprising at least a gas inlet and a gas outlet operably connected to the reaction chamber to allow gas flow through the reaction chamber.

23. The reaction chamber of claim 19, further comprising a viewing port for viewing an internal portion of the reaction chamber.