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Methods Of Patterning Materials, And Methods Of Forming Memory Cells

  • US 20110129991A1
  • Filed: 12/02/2009
  • Published: 06/02/2011
  • Est. Priority Date: 12/02/2009
  • Status: Abandoned Application
First Claim
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1. A method of patterning one or more materials, comprising:

  • forming a homogeneous mass over said one or more materials;

    wherein the homogeneous mass comprises carbon;

    forming a first patterned mask over the homogeneous mass, the first patterned mask comprising a plurality of spaced-apart features, the spaced-apart features having sidewall surfaces;

    forming first spacers along the sidewall surfaces of the spaced-apart features;

    removing the spaced-apart features to leave a second patterned mask corresponding to the first spacers;

    partially etching into the homogeneous mass to transfer a pattern of the second patterned mask partially through the homogeneous mass;

    the partially etched homogeneous mass being a third patterned mask;

    the third patterned mask comprising spaced-apart pedestals that have sidewall surfaces, the spaced-apart pedestals of the third patterned mask being supported by an unetched remaining portion of the homogeneous mass;

    removing the first spacers from over the third patterned mask, and then forming second spacers along the sidewall surfaces of the spaced-apart pedestals;

    the second spacers forming a fourth patterned mask;

    etching through the remaining portion of the homogeneous mass to transfer a pattern of the fourth patterned mask through the homogeneous mass and to thereby pattern the homogeneous mass and form features comprising homogenous mass material and overlying second spacer material;

    removing the second spacer material; and

    utilizing the patterned homogeneous mass to impart a pattern into said one or more materials.

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