SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20110133179A1
• Filed: 12/02/2010
• Published: 06/09/2011
• Est. Priority Date: 12/08/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei
• Granted Patent: US 8,420,553 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 21/3003 Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A manufacturing method of a semiconductor device, which includes the steps of forming a gate electrode layer over a substrate having an insulating surface, forming a gate insulating layer over the gate electrode layer, forming an oxide semiconductor layer over the gate insulating layer, forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer, forming an insulating layer including oxygen over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and after formation of an insulating layer including hydrogen over the insulating layer including oxygen, performing heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

Claims

1. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first insulating layer over a substrate;

forming an oxide semiconductor layer over the first insulating layer;

forming a second insulating layer over the oxide semiconductor layer;

forming an insulating layer including hydrogen over the second insulating layer; and

after forming the insulating layer including hydrogen, performing a heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

2. The manufacturing method of a semiconductor device, according to claim 1, wherein the heat treatment is performed at a temperature higher than or equal to 150°

C. and lower than or equal to 450°

C.

3. The manufacturing method of a semiconductor device, according to claim 1, wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

4. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first gate electrode layer over a substrate having an insulating surface;

forming a gate insulating layer over the first gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

forming an insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

forming an insulating layer including hydrogen over the insulating layer; and

after forming the insulating layer including hydrogen, performing a heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

5. The manufacturing method of a semiconductor device, according to claim 4, further comprising a step of, after forming the insulating layer, forming a second gate electrode layer over the insulating layer and in a region overlapping with the first gate electrode layer.

6. The manufacturing method of a semiconductor device, according to claim 4, wherein the heat treatment is performed at a temperature higher than or equal to 150°

C. and lower than or equal to 450°

C.

7. The manufacturing method of a semiconductor device, according to claim 4, wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

8. A manufacturing method of a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate having an insulating surface;

forming a gate insulating layer over the gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

forming an insulating layer functioning as a channel protective layer over part of the oxide semiconductor layer;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer and the insulating layer;

forming an insulating layer including hydrogen over the insulating layer, the source electrode layer, and the drain electrode layer; and

after forming the insulating layer including hydrogen, performing a heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

9. The manufacturing method of a semiconductor device, according to claim 8, wherein the heat treatment is performed at a temperature higher than or equal to 150°

C. and lower than or equal to 450°

C.

10. The manufacturing method of a semiconductor device, according to claim 8, wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

11. A manufacturing method of a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer over a substrate having an insulating surface;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

forming an insulating layer functioning as a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

forming a gate electrode layer over the insulating layer;

forming an insulating layer including hydrogen over the insulating layer and the gate electrode layer; and

after forming the insulating layer including hydrogen, performing a heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

12. The manufacturing method of a semiconductor device, according to claim 11, wherein the heat treatment is performed at a temperature higher than or equal to 150°

C. and lower than or equal to 450°

C.

13. The manufacturing method of a semiconductor device, according to claim 11, wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

14. A manufacturing method of a semiconductor device, comprising the steps of:

forming a first gate electrode layer over a substrate having an insulating surface;

forming a gate insulating layer over the first gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

after forming the oxide semiconductor layer, performing a first heat treatment so that a hydrogen concentration of the oxide semiconductor layer is reduced;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

forming an insulating layer including oxygen over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

after forming the insulating layer including oxygen, performing a second heat treatment so that oxygen is supplied to the oxide semiconductor layer;

forming an insulating layer including hydrogen over the insulating layer including oxygen; and

after forming the insulating layer including hydrogen, performing a third heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

15. The manufacturing method of a semiconductor device, according to claim 14, further comprising a step of, after forming the insulating layer including oxygen, forming a second gate electrode layer over the insulating layer including oxygen and in a region overlapping with the first gate electrode layer.

16. The manufacturing method of a semiconductor device, according to claim 14, wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

17. The manufacturing method of a semiconductor device, according to claim 14,

wherein the first heat treatment is performed at a temperature higher than or equal to 400°

C. and lower than or equal to 750°

C.,

wherein the second heat treatment is performed at a temperature higher than or equal to 200°

C. and lower than or equal to 450°

C., and

wherein the third heat treatment is performed at a temperature higher than or equal to 150°

C. and lower than or equal to 450°

C.

18. A manufacturing method of a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate having an insulating surface;

forming a gate insulating layer over the gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

after forming the oxide semiconductor layer, performing a first heat treatment so that a hydrogen concentration of the oxide semiconductor layer is reduced;

forming an insulating layer including oxygen functioning as a channel protective layer over part of the oxide semiconductor layer;

after forming the insulating layer including oxygen, performing a second heat treatment so that oxygen is supplied to the oxide semiconductor layer;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer and the insulating layer including oxygen;

forming an insulating layer including hydrogen over the insulating layer including oxygen, the source electrode layer, and the drain electrode layer; and

after forming the insulating layer including hydrogen, performing a third heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

19. The manufacturing method of a semiconductor device, according to claim 18, wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

20. The manufacturing method of a semiconductor device, according to claim 18,

wherein the first heat treatment is performed at a temperature higher than or equal to 400°

C. and lower than or equal to 750°

C.,

wherein the second heat treatment is performed at a temperature higher than or equal to 200°

C. and lower than or equal to 450°

C., and

wherein the third heat treatment is performed at a temperature higher than or equal to 150°

C. and lower than or equal to 450°

C.

21. A manufacturing method of a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer over a substrate having an insulating surface;

after forming the oxide semiconductor layer, performing a first heat treatment so that a hydrogen concentration of the oxide semiconductor layer is reduced;

forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

forming an insulating layer including oxygen functioning as a gate insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer;

after forming the insulating layer including oxygen, performing a second heat treatment so that oxygen is supplied to the oxide semiconductor layer;

forming a gate electrode layer over the insulating layer including oxygen;

forming an insulating layer including hydrogen over the insulating layer including oxygen and the gate electrode layer; and

after forming the insulating layer including hydrogen, performing a third heat treatment so that hydrogen in the insulating layer including hydrogen is supplied to at least the oxide semiconductor layer.

22. The manufacturing method of a semiconductor device, according to claim 21,

wherein the first heat treatment is performed at a temperature higher than or equal to 400°

C. and lower than or equal to 750°

C.,

wherein the second heat treatment is performed at a temperature higher than or equal to 200°

C. and lower than or equal to 450°

C., and

wherein the third heat treatment is performed at a temperature higher than or equal to 150°

C. and lower than or equal to 450°

C.

23. The manufacturing method of a semiconductor device, according to claim 21, wherein the insulating layer including hydrogen is formed by a CVD method using silane and a gas including nitrogen.

24. A semiconductor device comprising:

a gate electrode layer over a substrate having an insulating surface;

a gate insulating layer over the gate electrode layer;

an oxide semiconductor layer over the gate insulating layer;

a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

an insulating layer including oxygen in contact with the oxide semiconductor layer; and

an insulating layer including hydrogen in contact with the insulating layer including oxygen.

25. The semiconductor device according to claim 24, wherein the insulating layer including hydrogen is a silicon nitride layer or a silicon nitride oxide layer.