SEMICONDUCTOR DEVICE

• US 20110133196A1
• Filed: 12/01/2010
• Published: 06/09/2011
• Est. Priority Date: 12/04/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: OCHIAI, Teruaki, KUSUNOKI, Koji, YAMAZAKI, Shunpei, MIYAIRI, Hidekazu, TSUJI, Takahiro
• Granted Patent: US 8,470,649 B2
• Time in Patent Office: Days
• US Class Current: 257/60
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.

Claims

1. A semiconductor device comprising:

a gate electrode;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film; and

a source electrode and a drain electrode over the oxide semiconductor film,

wherein a value of an activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less than or equal to 25 meV.

2. The semiconductor device according to claim 1, wherein the activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less or equal to 20 meV.

3. The semiconductor device according to claim 1, wherein a film thickness of the gate insulating film is greater than or equal to 10 nm and less than or equal to 500 nm.

4. The semiconductor device according to claim 1, wherein a film thickness of the oxide semiconductor film is from 10 nm to 300 nm.

5. The semiconductor device according to claim 1, wherein the source electrode and the drain electrode include titanium, magnesium, yttrium, aluminum, tungsten, or molybdenum.

6. The semiconductor device according to claim 1, further comprising a transistor including the gate electrode, the gate insulating film, the oxide semiconductor film, the source electrode and the drain electrode,

wherein an Off current of the transistor is less than or equal to 1×

10<sup>−

13</sup> A.

7. The semiconductor device according to claim 1,

wherein the value of the activation energy is obtained from temperature dependence of a current flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode.

8. A semiconductor device comprising:

a gate electrode;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film;

a source electrode and a drain electrode over the oxide semiconductor film; and

an insulating film being in contact with a part of the oxide semiconductor film, over the source electrode and the drain electrode,

wherein a value of an activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less than or equal to 25 meV.

9. The semiconductor device according to claim 8, wherein the activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less or equal to 20 meV.

10. The semiconductor device according to claim 8, wherein a film thickness of the gate insulating film is greater than or equal to 10 nm and less than or equal to 500 nm.

11. The semiconductor device according to claim 8, wherein a film thickness of the oxide semiconductor film is from 10 nm to 300 nm.

12. The semiconductor device according to claim 8, wherein the source electrode and the drain electrode include titanium, magnesium, yttrium, aluminum, tungsten, or molybdenum.

13. The semiconductor device according to claim 8, further comprising a transistor including the gate electrode, the gate insulating film, the oxide semiconductor film, the source electrode and the drain electrode,

wherein an Off current of the transistor is less than or equal to 1×

10<sup>−

13</sup> A.

14. The semiconductor device according to claim 8,

wherein the value of the activation energy is obtained from temperature dependence of a current flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode.

15. A semiconductor device comprising:

a transistor including a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an oxide semiconductor film,

wherein a value of an activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less than or equal to 25 meV.

16. The semiconductor device according to claim 15, wherein the activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less or equal to 20 meV.

17. The semiconductor device according to claim 15, wherein a film thickness of the gate insulating film is greater than or equal to 10 nm and less than or equal to 500 nm.

18. The semiconductor device according to claim 15, wherein a film thickness of the oxide semiconductor film is from 10 nm to 300 nm.

19. The semiconductor device according to claim 15, wherein the source electrode and the drain electrode include titanium, magnesium, yttrium, aluminum, tungsten, or molybdenum.

20. The semiconductor device according to claim 15,

wherein an Off current of the transistor is less than or equal to 1×

10<sup>−

13</sup> A.

21. The semiconductor device according to claim 15,

wherein the value of the activation energy is obtained from temperature dependence of a current flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode.

22. The semiconductor device according to claim 15,

wherein the transistor is a bottom gate transistor.