EXTENSIVE AREA LED HAVING ROUGNESS SURFACE

• US 20110133231A1
• Filed: 01/07/2005
• Published: 06/09/2011
• Est. Priority Date: 12/14/2004
• Status: Abandoned Application

• Current Assignee: Epiplus Co., Ltd.
• Original Assignee: Epiplus Co., Ltd.
• Inventors: Park, Jin Soo, Choi, Pun Jae, Oh, Bae Hwan, Kim, Hyun Goo, Gong, Myeong Kook
• Application Number:
  US11/791,035
• Publication Number:
  US 20110133231A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

The structure for fixing packing of a lid (1) of an airtight container comprises a ring shaped groove (5) formed at a lower surface of the lid (1), a packing (6) that includes a tight contacting surface part (10) upwardly expanded in an outward direction for sealing gaps based on a tight contact with an inner wall surface (9) of the container body (8), and a fixing surface part (7) that is horizontally extended in a direction of an inner side of the tight contacting surface part (10); a plurality of slits (12) that are formed at the fixing surface part (7) of the packing (6) at regular intervals in arc shapes each having the same width as the ring shaped groove (5); and a packing fixing member (13) that is protruded and has the same cross section shape as the slit of the packing (6).

Claims

1. An extensive area light emitting diode having roughness surface including a substrate 10, a N-type layer 20, an active layer 30 for emitting light, and a P-type layer 40, a transparence electrode 50, and electrodes 70 and 80 positioned on the N-type layer 20 and the P-type layer 30 respectively, the extensive area light emitting diode comprising:

a roughness area 80 is formed by etching the transparence electrode 50 and the P-type layer 40, or the P-type layer 40 to minimize a loss of light.

2. The extensive area light emitting diode having roughness surface as claimed in claim 1, wherein the roughness area 80 formed around the N-type electrode.

3. The extensive area light emitting diode having roughness surface claimed in claims 1, wherein the roughness area 80 is formed on a scribing region of the diode.

4. The extensive area light emitting diode having roughness surface as claimed in claims 1, wherein the electrodes 60 and 70 are alternately positioned on the N-type layer 20 and the P-type layer 40, and the roughness area 80 is formed on one position or numbers of positions between the N-type electrode 60 and the P-type electrode 70.

5. The extensive area light emitting diode having roughness surface as claimed in claim 4, wherein The roughness area 80 is formed around the N-type electrode 60 between the P-type layers 40 separated by the N-type electrode 60.