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MEMORY DEVICE WITH RECESSED CONSTRUCTION BETWEEN MEMORY CONSTRUCTIONS

  • US 20110133270A1
  • Filed: 02/10/2011
  • Published: 06/09/2011
  • Est. Priority Date: 06/24/2005
  • Status: Active Grant
First Claim
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1. A memory device comprising:

  • a substrate having a first surface;

    a plurality of memory cells arranged in a pattern on the substrate, wherein the plurality of memory cells each include a charge storage device and a recessed access device formed so as to extend into the substrate, wherein the recessed access device induces a first depletion region in the substrate and further defines a current flow path about the recessed perimeter of the recessed access device within the substrate;

    a plurality of isolation structures each recessed in the substrate so as to isolate adjacent memory cells of the plurality of memory cells from each other, wherein each of the plurality of isolation structures induce a second depletion region in the substrate to thereby inhibit leakage between adjacent memory cells.

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