Trench MOS Device with Schottky Diode and Method for Manufacturing Same
First Claim
1. A semiconductor device comprising:
- a first semiconductor region of a first conductivity type and a first conductivity concentration;
a first trench including a metal layer in contact with said first semiconductor region to form a metal-semiconductor junction; and
a second semiconductor region adjacent to said first semiconductor region and the metal-semiconductor junction, the second semiconductor region having a second conductivity type and a second conductivity concentration,wherein said second semiconductor region forms a PN junction with said first semiconductor region.
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Accused Products
Abstract
In one embodiment the present invention includes a semiconductor device. The semiconductor device comprises a first semiconductor region, a second semiconductor region and a trench region. The first semiconductor region is of a first conductivity type and a first conductivity concentration. The trench region includes a metal layer in contact with the first semiconductor region to form a metal-semiconductor junction. The second semiconductor region is adjacent to the first semiconductor region that has a second conductivity type and a second conductivity concentration. The second semiconductor region forms a PN junction with the first semiconductor region, and the trench region has a depth such that the metal-semiconductor junction is proximate to the PN junction.
14 Citations
13 Claims
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1. A semiconductor device comprising:
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a first semiconductor region of a first conductivity type and a first conductivity concentration; a first trench including a metal layer in contact with said first semiconductor region to form a metal-semiconductor junction; and a second semiconductor region adjacent to said first semiconductor region and the metal-semiconductor junction, the second semiconductor region having a second conductivity type and a second conductivity concentration, wherein said second semiconductor region forms a PN junction with said first semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
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forming a first semiconductor region of a first conductivity type and a first conductivity concentration within a second semiconductor region of a second conductivity type and a second conductivity concentration; etching a first trench through said first semiconductor region; and adding a metal layer within said first trench such that said metal layer contacts said second semiconductor region to form a metal-semiconductor junction; wherein said first semiconductor region forms a PN junction with said second semiconductor region, and wherein said first trench has a depth such that said metal-semiconductor junction is adjacent to said PN junction. - View Dependent Claims (9, 10, 11, 12, 13)
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Specification