×

Through-Silicon Via With Air Gap

  • US 20110133335A1
  • Filed: 02/16/2011
  • Published: 06/09/2011
  • Est. Priority Date: 12/31/2008
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a semiconductor substrate;

    a through-silicon via extending through the semiconductor substrate; and

    an air gap interposed between the through-silicon via and the semiconductor substrate.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×