Through-Silicon Via With Air Gap

• US 20110133335A1
• Filed: 02/16/2011
• Published: 06/09/2011
• Est. Priority Date: 12/31/2008
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chen, Ming-Fa
• Granted Patent: US 8,436,448 B2
• Time in Patent Office: Days
• US Class Current: 257/737
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/68372 used to support a device or wafer when forming electrical connections thereto
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0554 External layer
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0555 Shape
• CPC Class Codes: H01L 2224/0556 Disposition
• CPC Class Codes: H01L 2224/05567 the external layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/13009 Bump connector integrally formed with a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance

Abstract

A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the liner, which is subsequently removed to form an air gap around the conductive material of the through-silicon via. A dielectric layer is formed of the backside of the semiconductor substrate to seal the air gap.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a through-silicon via extending through the semiconductor substrate; and

an air gap interposed between the through-silicon via and the semiconductor substrate.

2. The semiconductor device of claim 1, wherein a portion of the through-silicon via protrudes from a backside of the semiconductor substrate.

3. The semiconductor device of claim 1, further comprising a dielectric layer overlying a backside of the semiconductor substrate, the dielectric layer sealing the air gap along the backside of the semiconductor substrate.

4. The semiconductor device of claim 3, wherein the dielectric layer extends over a portion of the through-silicon via protruding from the backside of the semiconductor substrate.

5. The semiconductor device of claim 3, wherein at least a portion of the through-silicon via protrudes from the dielectric layer.

6. The semiconductor device of claim 1, wherein the air gap extends over a dielectric layer on a circuit side of the semiconductor substrate.

7. The semiconductor device of claim 1, further comprising a conductive layer extending over a dielectric layer from the through-silicon via to a contact, wherein the conductive layer and the through-silicon via are formed of a single continuous layer of conductive material.

8. A semiconductor device comprising:

a substrate having a circuit side and a backside, the substrate having electrical circuitry formed on the circuit side;

an opening extending from the circuit side to the backside;

conductive material extending through the opening, the conductive material extending from the circuit side to the backside;

a gap between the conductive material and sidewalls of the opening; and

an isolation film overlying the backside of the substrate and abutting the conductive material.

9. The semiconductor device of claim 8, wherein a portion of the conductive material protrudes from the backside of the substrate.

10. The semiconductor device of claim 8, wherein the isolation film seals the gap along the backside of the substrate.

11. The semiconductor device of claim 10, wherein the isolation film extends over a portion of the conductive material protruding from the backside of the substrate.

12. The semiconductor device of claim 10, wherein at least a portion of the conductive material protrudes from the dielectric layer.

13. The semiconductor device of claim 8, wherein the gap extends over a dielectric layer on the circuit side of the substrate.

14. The semiconductor device of claim 8, wherein the conductive material extends over a dielectric layer on the circuit side of the substrate.

15. A semiconductor device comprising:

a substrate having a first side and a second side;

a first dielectric layer over the first side of the substrate;

a conductive material extending over at least a portion of the first dielectric layer and through an opening in the substrate, wherein the conductive material is spaced apart from sidewalls of the opening; and

a second dielectric layer over the second side of the substrate, the second dielectric layer extending over the space between the substrate and the conductive material.

16. The semiconductor device of claim 15, wherein a portion of the conductive material protrudes from the second side of the substrate.

17. The semiconductor device of claim 15, wherein the conductive material protrudes from the second side of the substrate and wherein the second dielectric layer forms a seal around the conductive material.

18. The semiconductor device of claim 17, wherein at least a portion of the conductive material protrudes from the dielectric layer.

19. The semiconductor device of claim 15, wherein the conductive material protrudes from the second side of the substrate and wherein the second dielectric layer extends up a sidewall of the conductive material.

20. The semiconductor device of claim 15, wherein at least a portion of the conductive material extending over the first dielectric layer is spaced apart from the first dielectric layer.