SEMICONDUCTOR DEVICE

• US 20110133561A1
• Filed: 06/19/2009
• Published: 06/09/2011
• Est. Priority Date: 07/25/2008
• Status: Active Grant

• Current Assignee: Sanken Electric Company Limited
• Original Assignee: Sanken Electric Company Limited
• Inventors: Asuke, Hideki, Kanazawa, Masaki
• Granted Patent: US 8,154,118 B2
• Time in Patent Office: Days
• US Class Current: 307/75
• CPC Class Codes: H01F 2027/2819 Planar transformers with printed windings, e.g. surrounded by two cores and to be mounted on printed circuit
• CPC Class Codes: H01F 27/2804 Printed windings
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/552 Protection against radiation, e.g. light or electromagnetic waves
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A semiconductor device (10) includes: an base substance (15) having a ferromagnetic material; a first semiconductor chip (11) and a second semiconductor chip (12) installed on the base substance (15); a first coil (131) installed on the base substance (15) and electrically connected to the first semiconductor chip (11); a second coil (132) installed on the first coil (131), electromagnetically connected to the first coil (131) and electrically connected to the second semiconductor chip (12); a transformer assembly (18) made of a ferromagnetic material and installed on the base substance (15), and a sealing body. The transformer assembly (18) includes a first core section (181), a first side shield section (182), and a first upper shield section (183).

Claims

1. A semiconductor device comprising:

a base substance including a ferromagnetic material;

a first semiconductor chip and a second semiconductor chip installed on the base substance;

a first coil installed on the ferromagnetic material of the base substance, and electrically connected to the first semiconductor chip;

a second coil placed on the first coil, electromagnetically connected to the first coil, and electrically connected to the second semiconductor chip;

a transformer assembly installed on the base substance, and made up by;

a first core section extending from the center of the second coil to the center of the first coil;

a first side shield section extending along a part of the side surface of the second coil and a part of a side surface of the first coil; and

a first upper shield section placed on the first coil and the second coil, the first core section, the first side shield section and the first upper shield section being made of ferromagnetic materials; and

a sealing body covering not only a part of the base substance but also the first semiconductor chip, the second semiconductor chip, the first coil, the second coil, and the transformer assembly.

2. The semiconductor device defined in claim 1 further comprising:

a third coil provided on the ferromagnetic material of the base substance at a position different from positions of the first coil and the second coil, and electrically connected to the first semiconductor chip; and

a fourth coil provided on the third coil, electromagnetically connected to the third coil, and electrically connected to the second semiconductor chip, wherein the transformer assembly further includes;

a second core section extending from the center of the fourth coil to the center of the third coil;

a second side shield section provided along a part of a side surface of the fourth coil and a part of a side surface of the third coil;

a first upper shield section provided on the third coil and the fourth coil; and

a transformer shield section provided between the first coil and the second coil, and between the third coil and the fourth coil.

3. The semiconductor device defined in claim 2, further comprising a flexible multilayered substrate which is provided on a part of the surface of the base substance, and carrying thereon the first coil, the second coil, the third coil and the fourth coil.

4. The semiconductor device defined in claim 1, wherein the base substance and the transformer assembly are made of iron-nickel alloys.

5. The semiconductor device defined in claim 3, wherein the flexible multilayered substrate is provided on the part of the base substance, and includes a first insulator made of a flexible resin film, the second coil and the fourth coil provided on the first insulator;

a second insulator provided on the second coil and the fourth coil and made of a flexible resin film, the first coil and the third coil provided on the second insulator, and a third insulator provided on the first coil and the third coil and made of a flexible resin film.

6. The semiconductor device defined in claim 3, wherein the first semiconductor chip and the second semiconductor chip stand off from each other on the multilayered substrate, and the first coil, the second coil, the third coil and the fourth coil are provided between the first semiconductor chip and the second semiconductor chip.

7. The semiconductor device defined in claim 2, wherein the first coil, the second coil and the first core section of the transformer assembly configure a first transformer, and the third coil, the fourth coil and the second core section of the transformer assembly configure a second transformer.

8. The semiconductor device defined in claim 7, wherein the first semiconductor chips functions as a driver, the second semiconductor chip functions as a buffer, and the first transformer and the second transformer receive signals from the driver and send them to the buffer.