SPECTRAL PURITY FILTER FOR MULTI-LAYER MIRROR, LITHOGRAPHIC APPARATUS INCLUDING SUCH MULTI-LAYER MIRROR, METHOD FOR ENLARGING THE RATIO OF DESIRED RADIATION AND UNDESIRED RADIATION, AND DEVICE MANUFACTURING METHOD

• US 20110134410A1
• Filed: 02/16/2011
• Published: 06/09/2011
• Est. Priority Date: 04/27/2005
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Banine, Vadim Yevgenyevich, Bakker, Levinus Pieter, VAN HERPEN, Maarten Marinus Johannes Wilhelmus, Klunder, Derk Jan Wilfred
• Granted Patent: US 8,139,200 B2
• Time in Patent Office: Days
• US Class Current: 355/71
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G02B 1/10 Optical coatings produced by application to, or surface treatment of, optical elements G02B1/08 takes precedence
• CPC Class Codes: G02B 5/0816 Multilayer mirrors, i.e. having two or more reflecting layers G02B5/0883, G02B5/0891 take precedence
• CPC Class Codes: G02B 5/0891 Ultraviolet [UV] mirrors apparatus for microlithography exposure G03F7/70; X-ray multilayer structures G21K1/06
• CPC Class Codes: G02B 5/283 designed for the ultraviolet
• CPC Class Codes: G03F 1/24 Reflection masks; Preparation thereof
• CPC Class Codes: G03F 7/70575 Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
• CPC Class Codes: G03F 7/70958 Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
• CPC Class Codes: G21K 1/062 Devices having a multilayer structure
• CPC Class Codes: G21K 2201/067 Construction details

Abstract

A lithographic apparatus comprising a support configured to support a patterning device; a substrate table configured to hold a substrate; a projection system configured to project a pattern imparted to a radiation beam by the patterning device onto a target portion of the substrate; and a first multi-layer mirror and a second multi-layer mirror, the first multi-layer mirror and the second multi-layer minor being arranged along a path of the radiation beam, the first multi-layer minor and the second multi-layer mirror each having a reflectivity of at least about 50% in extreme ultra violet wavelength range, and the first multi-layer mirror configured to reduce radiation having wavelengths in a first wavelength range and the second multi-layer minor configured to reduce radiation having wavelengths in a second wavelength range different from the first wavelength range, wherein the first wavelength range and the second wavelength range are outside extreme ultra violet wavelength range.

Claims

1. A lithographic apparatus comprising:

a support configured to support a patterning device;

a substrate table configured to hold a substrate;

a projection system configured to project a pattern imparted to a radiation beam by the patterning device onto a target portion of the substrate; and

a first multi-layer mirror and a second multi-layer mirror,

the first multi-layer mirror and the second multi-layer mirror being arranged along a path of the radiation beam,

the first multi-layer mirror and the second multi-layer mirror each having a reflectivity of at least about 50% in extreme ultra violet wavelength range, and

the first multi-layer mirror configured to reduce radiation having wavelengths in a first wavelength range and the second multi-layer mirror configured to reduce radiation having wavelengths in t second wavelength range different from the first wavelength range,

wherein the first wavelength range and the second wavelength range are outside extreme ultra violet wavelength range.

2. The lithographic apparatus of claim 1, wherein the first wavelength range is 100-200 nm and the second wavelength range is 200-300 nm.

3. The lithographic apparatus of claim 1, wherein each of the first multi-layer mirror and the second multi-layer mirror further comprises a multi-layer stack, the multi-layer stack comprising a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack.

4. The lithographic apparatus of claim 3, wherein the spectral filter top layer is configured to minimize absorption and/or destructive interference of radiation having a wavelength selected from a wavelength range of 5-20 nm;

and wherein the spectral filter top layer is configured to maximize absorption and/or destructive interference of radiation having a wavelength selected from a substantial part of a wavelength range of 100-400 nm.

5. The lithographic apparatus of claim 3, wherein the spectral filter top layer further comprises a first spectral purity enhancement layer and an intermediate layer, the intermediate layer being arranged between the first spectral purity enhancement layer and the multi-layer stack top layer.

6. The lithographic apparatus of claim 5, wherein the first spectral purity enhancement layer has a material and a layer thickness selected to enlarge the ratio of radiation having a wavelength selected from a wavelength range of 5-20 nm and radiation having a wavelength selected from a wavelength range of 100-400 nm in the beam of radiation.

7. The lithographic apparatus of claim 3, further comprising a cap layer arranged on the spectral filter top layer.

8. The lithographic apparatus of claim 7, wherein the cap layer comprises a material selected from Ru, BN, B₄C, B, C, TiN, Pd, Rh, Au, C₂F₄, SiN, Si₃N₄, SiC, MgF₂ or LiF;

and/or wherein the cap layer has a layer thickness between 0.5 and 2.5 nm.

9. The lithographic apparatus of claim 1, wherein at least one of the first multi-layer mirror and the second multi-layer mirror is a normal incidence mirror.

10. The lithographic apparatus of claim 1, wherein at least one of the first multi-layer mirror and the second multi-layer mirror is configured to reflect radiation having a wavelength selected from a wavelength range of 5-20 nm.

11. The lithographic apparatus of claim 1, wherein at least one the first multilayer mirror and the second multi-layer mirror is a normal incidence Si/Mo multi-layer mirror configured to reflect radiation having a wavelength selected from the wavelength range of 12-15 nm.

12. The lithographic apparatus of claim 3, wherein the multi-layer stack top layer comprises Ru and has a thickness between 0.5 and 2.5 nm.

13. The lithographic apparatus of claim 3, wherein the spectral filter top layer of the first multi-layer mirror and the spectral filter top layer of the second multi-layer mirror are configured to reduce radiation having a wavelength in a range of 100-200 nm and in a range of 200-300 nm, respectively.

14. The lithographic apparatus of claim 3, wherein the spectral filter top layer of the first multi-layer minor and the spectral filter top layer of the second multi-layer mirror are different.

15. The lithographic apparatus of claim 1, wherein the first multi-layer mirror and the second multi-layer minor are configured to filter away radiation of undesired wavelengths while radiation of desired wavelengths is substantially unfiltered.

16. The lithographic apparatus of claim 15, wherein the desired wavelengths are between 5 and 20 nm.

17. A method for enlarging a ratio of radiation having a wavelength selected from a wavelength range of 5-20 nm to radiation having a wavelength selected from a wavelength range of 100-400 nm in a beam of radiation of a source emitting radiation in both wavelength ranges, the method comprising consecutively reflecting at least part of the beam of radiation on a first multi-layer mirror and a second multi-layer mirror,

the first multi-layer minor and the second multi-layer minor each having a reflectivity of at least about 50% in extreme ultra violet wavelength range, and

the first multi-layer minor configured to reduce radiation having wavelengths in a first wavelength range and the second multi-layer mirror configured to reduce radiation having wavelengths in a second wavelength range different from the first wavelength range,

wherein the first wavelength range and the second wavelength range are outside extreme ultra violet wavelength range.

18. The method of claim 17, wherein the spectral filter top layer of the first multi-layer mirror and the spectral filter top layer of the second multi-layer mirror are configured to maximize absorption and/or destructive interference of radiation with different wavelengths.

19. The method of claim 17, wherein the spectral filter top layer of the first multi-layer mirror is configured to minimize absorption and/or destructive interference of radiation having a wavelength selected from a wavelength range of 5-20 nm;

and wherein the spectral filter top layer of the second multi-layer mirror is configured to maximize absorption and/or destructive interference of radiation having a wavelength selected from a substantial part of a wavelength range of 100-400 nm.

20. A device manufacturing method, comprising:

patterning a beam of radiation;

projecting the patterned beam of radiation onto a target portion of a substrate;

enlarging the ratio of radiation having a wavelength selected from a wavelength range of 5-20 nm and radiation having a wavelength selected from a wavelength range of 100-400 nm by consecutively reflecting at least part of the beam of radiation on a first multi-layer mirror and a second multi-layer mirror,

the first multi-layer mirror and the second multi-layer mirror each having a reflectivity of at least about 50% in extreme ultra violet wavelength range, and

the first multi-layer mirror configured to reduce radiation having wavelengths in a first wavelength range and the second multi-layer mirror configured to reduce radiation having wavelengths in a second wavelength range different from the first wavelength range,

wherein the first wavelength range and the second wavelength range are outside extreme ultra violet wavelength range.