SEMICONDUCTOR DEVICE HAVING AN InGaN LAYER
First Claim
1. A method for the manufacture of a vertical optoelectronic structure comprising:
- providing a stack comprising a first substrate and an InGaN seed layer formed thereon;
growing an InGaN layer on the InGaN seed layer to obtain an InGaN-on-substrate structure;
forming a first mirror layer overlaying a surface of the InGaN layer opposite the first substrate;
detaching the first substrate from the InGaN and mirror layers to expose the InGaN seed layer; and
forming a second mirror layer overlaying the exposed InGaN seed layer.
2 Assignments
0 Petitions
Accused Products
Abstract
The present invention relates to a method that involves providing a stack of a first substrate and a InGaN seed layer formed on the first substrate, growing an InGaN layer on the InGaN seed layer to obtain an InGaN-on-substrate structure, forming a first mirror layer overlaying the exposed surface of the grown InGaN layer, attaching a second substrate to the exposed surface of the mirror layer, detaching the first substrate from the InGaN seed layer and grown InGaN layer to expose a surface of the InGaN seed layer opposite the first mirror layer, and forming a second mirror layer overlaying the opposing surface of the InGaN seed layer.
-
Citations
20 Claims
-
1. A method for the manufacture of a vertical optoelectronic structure comprising:
-
providing a stack comprising a first substrate and an InGaN seed layer formed thereon; growing an InGaN layer on the InGaN seed layer to obtain an InGaN-on-substrate structure; forming a first mirror layer overlaying a surface of the InGaN layer opposite the first substrate; detaching the first substrate from the InGaN and mirror layers to expose the InGaN seed layer; and forming a second mirror layer overlaying the exposed InGaN seed layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A method for the manufacture of a vertical optoelectronic structure comprising:
-
providing a stack comprising a first substrate and an InGaN seed layer formed thereon; forming a dielectric bonding layer between the first substrate and the InGaN seed layer; growing an InGaN layer on the InGaN seed layer to obtain an InGaN-on-substrate structure; forming a first mirror layer overlaying a surface of the InGaN layer opposite the first substrate; detaching the first substrate from the InGaN and mirror layers to expose the InGaN seed layer; and forming a second mirror layer overlaying the exposed InGaN seed layer; wherein the dielectric bonding layer includes an electromagnetic absorbing layer disposed therein to promote subsequent detachment of the substrate by absorption of electromagnetic radiation.
-
-
17. A vertical optoelectronic structure comprising:
-
an InGaN seed layer; an active InGaN layer grown on the InGaN seed layer; and two mirror layers on opposing sides of and sandwiching the InGaN seed layer and active InGaN layer. - View Dependent Claims (18, 19, 20)
-
Specification