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SEMICONDUCTOR DEVICE HAVING AN InGaN LAYER

  • US 20110134954A1
  • Filed: 09/29/2010
  • Published: 06/09/2011
  • Est. Priority Date: 12/07/2009
  • Status: Active Grant
First Claim
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1. A method for the manufacture of a vertical optoelectronic structure comprising:

  • providing a stack comprising a first substrate and an InGaN seed layer formed thereon;

    growing an InGaN layer on the InGaN seed layer to obtain an InGaN-on-substrate structure;

    forming a first mirror layer overlaying a surface of the InGaN layer opposite the first substrate;

    detaching the first substrate from the InGaN and mirror layers to expose the InGaN seed layer; and

    forming a second mirror layer overlaying the exposed InGaN seed layer.

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