METAL ORGANIC PRECURSOR, A METHOD OF PREPARING THE SAME, AND A METHOD OF FORMING A CONDUCTIVE METAL FILM OR PATTERN

• US 20110135823A1
• Filed: 11/24/2010
• Published: 06/09/2011
• Est. Priority Date: 12/07/2009
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: BYUN, Young Hun, LEE, Jae Ho
• Granted Patent: US 8,680,309 B2
• Time in Patent Office: Days
• US Class Current: 427/256
• CPC Class Codes: C07F 1/005 without C-Metal linkages
• CPC Class Codes: C09D 11/00 Inks
• CPC Class Codes: C23C 18/08 characterised by the deposition of metallic material
• CPC Class Codes: H01B 1/12 organic substances organic macromolecular compounds or compositions C08

Abstract

A metal organic precursor, including a metal-chelate complex including a chelate including a Groups 3 to 12 metal ion, a chelating ligand, and an anion bound to the chelate, wherein the chelating ligand forms a reducing compound and a volatile material at a temperature of about 160° C. or lower, the anion forms a reducing compound and a volatile material at a temperature of about 180° C. or lower, and the metal-chelate complex is represented by Formula I:

[L1-Me]_pⁿ⁺[A]_q^m−  (I)

wherein Me is the Groups 3 to 12 metal ion, L1 is the chelating ligand, A is the anion, n, m, p, and q are independently integers of 1 or more, n is the sum of a charge quantity of L1 and a charge quantity of Me, m is a charge quantity of A, and (n×p)=(m×q).

Claims

1. A metal organic precursor comprising:

a metal-chelate complex comprising

a chelate comprising a Groups 3 to 12 metal ion and a chelating ligand, and

an anion bound to the chelate,

 

wherein

the chelating ligand forms a reducing compound and a volatile material at a temperature of about 160°

C. or lower,

the anion forms a reducing compound and a volatile material at a temperature of 180°

C. or lower, and

the metal-chelate complex is represented by Formula I;

[L1-Me]_pⁿ⁺[A]_q^m−

 

 

(I)

wherein

Me is the Groups 3 to 12 metal ion,

L1 is the chelating ligand,

A is the anion,

n, m, p, and q are independently integers of 1 or more,

n is a charge quantity of Me, or the sum of a charge quantity of L1 and a charge quantity of Me,

m is a charge quantity of A, and

(n×

p)=(m×

q).

2. The metal organic precursor of claim 1, wherein the Groups 3 to 12 metal ion is Cu, Ag, Pt, Pd, Au, Ni, or a combination comprising at least one of the foregoing.

3. The metal organic precursor of claim 1, wherein the chelating ligand is a hydrazine derivative having an N—

N bond and that forms NH₂—

NH₂, an alcohol, an alkene, H₂, H₂O, CO₂, or a combination comprising at least one of the foregoing.

4. The metal organic precursor of claim 3, wherein the chelating ligand is a hydrazine alkyl ester represented by Formula II:

5. The metal organic precursor of claim 1, wherein the anion is formate, oxalate, or a combination comprising at least one of the foregoing.

6. The metal organic precursor of claim 1, wherein the anion is a compound containing an aldehyde group that forms OCHO, an alcohol, alkene, H₂, H₂O, CO₂, or a combination comprising at least one of the foregoing.

7. The metal organic precursor of claim 6, wherein the anion is a compound represented by Formula III:

8. The metal organic precursor of claim 1, wherein the complex represented by Formula I is a metal-chelate complex represented by Formula IV:

9. The metal organic precursor of claim 1, further comprising a neutral ligand.

10. The metal organic precursor of claim 9, wherein the neutral ligand is an alkene, an alkyl, silicon, or an organic ligand having an element selected from sulfur, oxygen, phosphorus, nitrogen (N), or a combination comprising at least one of the foregoing.

11. The metal organic precursor of claim 1, further comprising water;

an amine-based solvent;

an ester-based solvent;

a ketone-based solvent;

an aliphatic or aromatic hydrocarbon-based solvent;

an ester-based solvent;

an alcohol-based solvent;

a polyol solvent;

an amide-based solvent;

a sulfoxide-based solvent;

an acetate-based solvent;

an inorganic solvent;

or a combination comprising at least one of the foregoing.

12. The metal organic precursor of claim 1, wherein a metallization temperature of the metal organic precursor is about 150°

C. or lower.

18. A composition comprising the metal organic precursor of claim 1.

13. A method of forming a conductive metal film, the method comprising:

preparing a metal organic precursor, the metal organic precursor comprising a metal-chelate complex comprising

a chelate comprising a Groups 3 to 12 metal ion and a chelating ligand, and

an anion bound to the chelate,

wherein

the chelating ligand forms a reducing compound and a volatile material at a temperature about 160°

C. or lower,

the anion forms a reducing compound and a volatile material at a temperature of about 180°

C. or lower, and

the metal-chelate complex is represented by Formula I;

[L1-Me]_pⁿ⁺[A]_q^m−

 

 

(I)

wherein

Me is the Groups 3 to 12 metal ion,

L1 is the chelating ligand,

A is the anion,

n, m, p, and q are independently integers of 1 or more,

n is the sum of a charge quantity of L1 and a charge quantity of Me,

m is a charge quantity of A, and

(n×

p)=(m×

q);

coating the metal organic precursor on a substrate; and

heat treating the metal organic precursor to form a conductive metal film.

14. The method of claim 13, wherein the substrate includes a semiconductor;

an inorganic material;

a polymer;

a cellulose-based material;

or a combination comprising at least one of the foregoing.

15. The method of claim 13, wherein the substrate includes a semiconductor;

a metal, a silicon wafer, a glass, a ceramic, a polyimide, a polyethylene naphthalate, a polyethylene terephthalate, a polyestersulfone, a polypropylene, an oriented polypropylene, a cyclo-olefin polymer, a polycarbonate, a rubber sheet, a fabric, wood, paper, or a combination comprising at least one of the foregoing.

16. The method of claim 13, wherein the coating the metal organic precursor is performed by spin coating, roll coating, deep coating, spray coating, dip coating, flow coating, doctor blading, dispensing, inkjet printing, screen printing, gravure printing, offset printing, pad printing, flexography printing, stencil printing, imprinting, xerography, or lithography.

17. The method of claim 13, wherein the heat treating is performed at 180°

C. or lower.