Techniques to Enhance Selectivity of Electrical Breakdown of Carbon Nanotubes

• US 20110136304A1
• Filed: 06/11/2010
• Published: 06/09/2011
• Est. Priority Date: 06/11/2009
• Status: Abandoned Application

• Current Assignee: Etamota Corporation
• Original Assignee: Etamota Corporation
• Inventors: Kumar, Rajay, Hunt, Brian D., Li, Chao, Wong, Eric W.
• Application Number:
  US12/814,254
• Publication Number:
  US 20110136304A1
• Time in Patent Office: Days
• US Class Current: 438/167
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/484 characterised by the channel regions
• CPC Class Codes: H10K 10/84 Ohmic electrodes, e.g. source or drain electrodes
• CPC Class Codes: H10K 85/221 Carbon nanotubes

Abstract

Techniques are used to fabricate carbon nanotube devices. These techniques improve the selective removal of undesirable nanotubes such as metallic carbon nanotubes while leaving desirable nanotubes such as semiconducting carbon nanotubes. In a first technique, slot patterning is used to slice or break carbon nanotubes have a greater length than desired. By altering the width and spacing of the slotting, nanotubes have a certain length or greater can be removed. Once the lengths of nanotubes are confined to a certain or expected range, the electrical breakdown approach of removing nanotubes is more effective. In a second technique, a Schottky barrier is created at one electrode (e.g., drain or source). This Schottky barrier helps prevent the inadvertent removal the desirable nanotubes when using the electrical breakdown approach. The first and second techniques can be used individually or in combination with each other.

Claims

1. A method comprising:

providing a substrate;

forming on a surface of the substrate a mixture of semiconducting and metallic carbon nanotubes;

on the mixture, patterning a first slot and second slot, each having a width W and a spacing S between the first and second slot, wherein W is less than S;

etching the mixture in the slots;

removing the patterning;

forming drain and source electrodes contacting ends of the mixture; and

biasing the drain and source electrode with voltage to remove the metallic carbon nanotubes.

2. A method of claim 1 comprising:

forming a Schottky barrier between an end of the mixture and the source electrode.

3. The method of claim 1 wherein the forming drain and source electrodes occurs before patterning a first slot and a second slot.

4. The method of claim 1 wherein the forming drain and source electrodes occurs after patterning a first slot and a second slot.

5. The method of claim 1 wherein the etching the mixture in the slots is replaced by inactivating the mixture in the slots.

6. A method comprising:

providing a silicon substrate;

forming on a surface of the substrate a mixture of semiconducting and metallic carbon nanotubes;

forming drain and source electrodes contacting ends of the mixture, wherein between a first end of the mixture and the source electrode is a Schottky barrier contact; and

biasing the drain and source electrode with voltage to remove the metallic carbon nanotubes.

7. The method of claim 6 wherein before forming the Schottky barrier, the method comprises:

on the mixture, patterning a first slot and second slot, each having a width W and a spacing S between the first and second slot, wherein W is less than S;

etching the mixture in the slots; and

removing the patterning.

8. The method of claim 6 wherein between a second end of the mixture and the drain electrode is an ohmic contact.

9. A method comprising:

providing a substrate;

forming on a surface of the substrate a mixture of semiconducting and metallic carbon nanotubes;

forming a source electrode comprising a Schottky barrier contact that couples to first ends of the mixture;

forming a drain electrode that electrically couples to second ends of the mixture; and

biasing the drain and source electrode with a voltage to remove the metallic carbon nanotubes.

10. The method of claim 9 wherein before forming the Schottky barrier, the method comprises:

on the mixture, patterning a first slot and second slot, each having a width W and a spacing S between the first and second slot, wherein W is less than S;

etching the mixture in the slots; and

removing the slot patterning.

11. The method of claim 9 wherein a first carbon nanotube of the mixture crosses and couples to at least a second carbon nanotube and a third carbon nanotube.

12. The method of claim 11 comprising:

on the mixture, patterning a first slot and second slot, each having a width W and a spacing S between the first and second slot, wherein W is less than S; and

etching the mixture in the slots, wherein the first carbon nanotube is sliced below the first slot and the second slot, thereby breaking the first carbon nanotubes into at least three portions.

13. The method of claim 9 wherein the source electrode comprises a rectangular structure having a width SW and length SL, the drain electrode comprises a rectangular structure having a width DW and length DL, SL is greater than SW, DL is greater than DW, and the source is separated from the drain a space having a width D.

14. The method of claim 13 wherein a first carbon nanotube of the mixture extends from the first electrode to the second electrode and has a length L1 greater than D, and a second carbon nanotube of the mixture extends from the first electrode to the second electrode and has a length L2 greater than L1, wherein an angle A1 between the first carbon nanotube and the first electrode is different from an angle A2 between the second carbon nanotube and the first electrode.

15. The method of claim 13 wherein before forming the mixture, forming on the substrate a thermal gate oxide comprising a thickness from about 2 nanometers to about 500 nanometers.

16. The method of claim 9 wherein the source electrode and drain electrode comprise at least one of metal, aluminum, copper, titanium, or tungsten.

17. The method of claim 9 comprising:

before forming the mixture, depositing a catalyst on the substrate comprising at least one of palladium, iron, nickel, or cobalt.

18. The method of claim 9 wherein as a result of the biasing, greater numbers of metallic carbon nanotubes are removed from the mixture than semiconducting carbon nanotubes.

19. The method of claim 9 wherein as a result of the biasing, at least twice as many metallic carbon nanotubes are removed than semiconducting carbon nanotubes.

20. The method of claim 9 wherein as a result of the biasing, at least ten times more metallic carbon nanotubes are removed than semiconducting carbon nanotubes.