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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING OPTICAL DEVICES

  • US 20110136318A1
  • Filed: 05/19/2010
  • Published: 06/09/2011
  • Est. Priority Date: 12/09/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • providing a semiconductor substrate having a first region and a second region;

    forming a first buried oxide layer in the semiconductor substrate in the first region, wherein a first semiconductor layer is defined on the first buried oxide layer in the first region;

    defining an active portion by forming a trench in the semiconductor substrate in the second region;

    forming a capping semiconductor pattern on a top surface of the active portion and an upper portion of a sidewall of the active portion and exposing a lower portion of the sidewall of the active portion;

    forming an oxide layer by oxidizing the capping semiconductor pattern and the lower portion of the sidewall of the active portion through an oxidizing process, wherein the oxide layer surrounds a non-oxidized portion of the active portion; and

    forming a first optical device at the semiconductor layer, wherein the non-oxidized portion of the active portion is a core through which optical signals passes and a first end of the core is connected to the first optical device.

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