SEMICONDUCTOR DICE TRANSFER-ENABLING APPARATUS AND METHOD FOR MANUFACTURING TRANSFER-ENABLING APPARATUS

• US 20110136324A1
• Filed: 12/08/2010
• Published: 06/09/2011
• Est. Priority Date: 12/09/2009
• Status: Abandoned Application

• Current Assignee: Cooledge Lighting Inc.
• Original Assignee: Cooledge Lighting Inc.
• Inventors: Ashdown, Ian, Speier, Ingo, Sheen, Calvin Wade
• Application Number:
  US12/963,609
• Publication Number:
  US 20110136324A1
• Time in Patent Office: Days
• US Class Current: 438/464
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: Y10T 225/30 Breaking or tearing apparatus

Abstract

A transfer-enabling apparatus, produced by a method of manufacturing, includes a substrate patterned with islands separated by trenches and an epitaxial layer, grown at least on the islands, providing semiconductor dice in such a configuration partially released from said substrate and suspended over the substrate, and interconnected, by anchors of epitaxial or other material that are attached to the substrate. The anchors are of width less than or equal to than the semiconductor dice and define fracture zones at connections of the anchors with the semiconductor dice.

Claims

1. A method for manufacturing a transfer-enabling apparatus, comprising:

providing a source substrate;

patterning said source substrate by forming trenches and spaced apart islands in said source substrate, one or more trenches being of width less than or equal to said islands;

growing an epitaxial layer on said source substrate so as to form semiconductor dice on said islands while leaving a portion of side faces of said islands exposed;

forming anchors attached to said source substrate and located between, connected with, and of width less than or equal to, said semiconductor dice, said anchors being formed thereby defining fracture zones; and

releasing said semiconductor dice from said source substrate so as to produce a semiconductor dice transfer-enabling apparatus wherein said semiconductor dice remain interconnected by, are suspended, and spaced above said source substrate, by said anchors until said anchors are subsequently fractured by a preselected force applied on said anchors at said fracture zones to thereby enable transfer of said semiconductor dice from said source substrate to another substrate.

2. The method of claim 1 wherein relative depths of said trenches and thicknesses of said epitaxial layer and anchors are tailored to locate said fracture zones at overlap of said anchors with said semiconductor dice.

3. The method of claim 1 wherein said anchors are formed by said growing of said epitaxial layer.

4. The method of claim 1 wherein said anchors are formed by depositing material of said anchors on said epitaxial layer at selected locations between said islands.

5. The method of claim 1 wherein said material of said anchors is one of a metallic, photoresist or organic material.

6. The method of claim 1 further comprising depositing sacrificial layers on said islands of said source substrate.

7. The method of claim 6 wherein said semiconductor dice are released from said source substrate by removing said sacrificial layers deposited on said islands of said source substrate below said semiconductor dice.

8. The method of claim 1 wherein said source substrate is made of a silicon material.

9. A method for manufacturing a transfer-enabling apparatus, comprising:

providing a source substrate;

patterning said source substrate by forming lower level trenches and spaced apart islands in said source substrate with said lower level trenches between said islands;

growing first epitaxial layers in said lower level trenches between said islands of said source substrate, said first epitaxial layers being of width less than or equal to said islands;

growing second sacrificial epitaxial layers on said islands of said source substrate so as to define upper level trenches between said islands above said first epitaxial layers;

growing a third epitaxial layer on said source substrate so as to form semiconductor dice on said second sacrificial epitaxial layers on said islands while leave portions of said second sacrificial layers exposed adjacent side faces of said islands, said growing said third epitaxial layer also forming anchors on said upper level trenches attached to said source substrate and located between, connected with, and of width less than or equal to, said semiconductor dice, said anchors defining fracture zones; and

releasing said semiconductor dice from said source substrate by removing said second sacrificial layers deposited on said islands of said source substrate below said semiconductor dice so as to produce a semiconductor dice transfer-enabling apparatus wherein said semiconductor dice remain interconnected, and are suspended and spaced above said source substrate, by said anchors until said anchors are subsequently fractured by a preselected force applied on said anchors at said fracture zones to thereby enable transfer of said semiconductor dice from said source substrate to another substrate.

10. The method of claim 9 wherein relative depths of said upper and lower level trenches and thicknesses of said third epitaxial layer and anchors are tailored to locate said fracture zones at overlap of said anchors with said semiconductor dice.

11. The method of claim 9 wherein said source substrate is made of a sapphire material.

12. A transfer-enabling apparatus, comprising:

a source substrate;

a multiplicity of semiconductor dice spaced apart from one another by trenches; and

a multiplicity of anchors each disposed between and interconnecting selected adjacent ones of said semiconductor dice and attached to said source substrate, said anchors of width less than or equal to said semiconductor dice and defining fracture zones at connections of said anchors with said semiconductor dice,

wherein said semiconductor dice are suspended, and spaced above said source substrate, by said anchors until said anchors are subsequently fractured by a preselected force applied on said anchors at said fracture zones to thereby enable transfer of said semiconductor dice from said source substrate to another substrate.

13. The apparatus of claim 12 wherein said thicknesses of said third epitaxial layer and anchors are tailored to locate said fracture zones at overlap of said anchors with said semiconductor dice.

14. The apparatus of claim 12 wherein said anchors are made of the same material as said semiconductor die.

15. The apparatus of claim 12 wherein said anchors are made of a different material from said semiconductor die.