HIGH MOBILITY MONOLITHIC P-I-N DIODES
First Claim
1. A method of forming a high-current density vertical p-i-n diode on a substrate in a substrate processing region in a substrate processing chamber, the method comprising:
- transferring the substrate into the substrate processing region;
flowing a group-IV-element-containing precursor having a group-IV flow rate while also flowing hydrogen with a hydrogen flow rate into the substrate processing region to form a polycrystalline semiconducting film on the substrate;
forming an RF plasma in the substrate processing region;
doping the semiconducting film during formation to form a vertical p-i-n film stack by sequentially(1) supplying a first dopant-containing precursor at a first dopant flow rate during formation of a first doped layer,(2) supplying essentially no flow rate of dopant-containing precursor during formation of an intrinsic layer,(3) supplying a second dopant-containing precursor at a second dopant flow rate during formation of a second doped layer,wherein formation of the first doped layer, the intrinsic layer and the second doped layer occur without exposing the substrate to atmosphere between formation of adjacent layers whereby oxygen incorporation near the interface is reduced and electronic mobility is improved, and wherein one of the first doped layer and the second doped layer is an n-type layer and the other is a p-type layer; and
removing the substrate from the substrate processing region.
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Abstract
Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.
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Citations
18 Claims
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1. A method of forming a high-current density vertical p-i-n diode on a substrate in a substrate processing region in a substrate processing chamber, the method comprising:
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transferring the substrate into the substrate processing region; flowing a group-IV-element-containing precursor having a group-IV flow rate while also flowing hydrogen with a hydrogen flow rate into the substrate processing region to form a polycrystalline semiconducting film on the substrate; forming an RF plasma in the substrate processing region; doping the semiconducting film during formation to form a vertical p-i-n film stack by sequentially (1) supplying a first dopant-containing precursor at a first dopant flow rate during formation of a first doped layer, (2) supplying essentially no flow rate of dopant-containing precursor during formation of an intrinsic layer, (3) supplying a second dopant-containing precursor at a second dopant flow rate during formation of a second doped layer, wherein formation of the first doped layer, the intrinsic layer and the second doped layer occur without exposing the substrate to atmosphere between formation of adjacent layers whereby oxygen incorporation near the interface is reduced and electronic mobility is improved, and wherein one of the first doped layer and the second doped layer is an n-type layer and the other is a p-type layer; and removing the substrate from the substrate processing region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification