POINT-OF-USE SILYLAMINE GENERATION

• US 20110136347A1
• Filed: 10/11/2010
• Published: 06/09/2011
• Est. Priority Date: 10/21/2009
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kovarsky, Nicolay Y., Lubomirsky, Dmitry
• Application Number:
  US12/901,979
• Publication Number:
  US 20110136347A1
• Time in Patent Office: Days
• US Class Current: 438/758
• CPC Class Codes: C01B 21/087 containing one or more hydrogen atoms
• CPC Class Codes: C23C 16/4488 by in situ generation of reactive gas by chemical or electrochemical reaction
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]

Abstract

The production and delivery of a reaction precursor containing one or more silylamines near a point of use is described. Silylamines may include trisilylamine (TSA) but also disilylamine (DSA) and monosilylamine (MSA). Mixtures involving two or more silylamines can change composition (e.g. proportion of DSA to TSA) over time. Producing silylamines near a point-of-use limits changing composition, reduces handling of unstable gases and reduces cost of silylamine-consuming processes.

Claims

1. A method of generating a silylamine-containing precursor near a point-of-use, the method comprising:

synthesizing the silylamine-containing precursor proximal to a substrate processing region; and

reacting the silylamine-containing precursor to form a film on a substrate within the substrate processing region.

2. The method of claim 1 wherein the substrate comprises a semiconducting material.

3. The method of claim 1 wherein the substrate comprises a trench which is substantially filled by the film.

4. The method of claim 1 wherein the silylamine-containing precursor comprises TSA.

5. The method of claim 1 wherein the silylamine-containing precursor comprises at least one of the group of precursors consisting of TSA, DSA and MSA.

6. The method of claim 1 wherein the silylamine-containing precursor comprises both TSA and DSA.

7. The method of claim 1 wherein the silylamine-containing precursor is synthesized within ten meters of the substrate processing region.

8. The method of claim 1 wherein the silylamine-containing precursor is synthesized within one meter of the substrate processing region.

9. The method of claim 1 wherein the operation of synthesizing the silylamine-containing precursor comprises reacting ammonia with a halogenated silane to form the silylamine in the silylamine-containing precursor.

10. The method of claim 1 wherein the film is a silicon-and-nitrogen-containing layer.

11. The method of claim 1 wherein the film is flowable shortly after deposition.

12. The method of claim 10 wherein the silicon-and-nitrogen-containing layer is subsequently converted to silicon oxide.

13. The method of claim 9 wherein the halogenated silane is monochlorosilane.

14. The method of claim 9 wherein the halogenated silane is a mono-halogenated silane selected from SiH₃Cl, SiH₃Br and SiH₃I.

15. The method of claim 9 wherein the halogenated silane is a di-halogenated silane selected from SiH₂Cl₂, SiH₂Br₂ and SiH₂I₂.

16. The method of claim 9 wherein the halogenated silane is a halogenated polysilane comprising more than one silicon atom.