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PLASMA PROCESSING SYSTEM CONTROL BASED ON RF VOLTAGE

  • US 20110137446A1
  • Filed: 12/07/2010
  • Published: 06/09/2011
  • Est. Priority Date: 11/19/2009
  • Status: Active Grant
First Claim
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1. A method for controlling a plasma processing system, comprising:

  • receiving an RF signal from at least one component of said chamber;

    processing said RF signal in the digital domain to obtain peak voltage information for each fundamental frequency and a broadband frequency of said RF signal; and

    deriving wafer bias information from said peak voltage information, wherein said wafer bias information is employed as one of a feed back and a control signal for said controlling said plasma processing system.

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