POLARIZATION DESIGNS FOR LITHOGRAPHIC APPARATUS

• US 20110139027A1
• Filed: 11/22/2010
• Published: 06/16/2011
• Est. Priority Date: 12/15/2009
• Status: Active Grant

• Current Assignee: ASML Holding NV
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: HANSEN, Steven George
• Granted Patent: US 8,982,324 B2
• Time in Patent Office: Days
• US Class Current: 101/450.1
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70566 Polarisation control

Abstract

Improved low k₁ lithographic imaging is disclosed by optimizing or improving an illumination polarization condition. The polarization condition may be a pre-defined spatially varying polarization, or a spatially customized local polarization of bright illumination points based on tracking a value of a desired lithographic response. Several non-traditional polarization conditions, e.g., TM/TE polarization (with or without a central TM region), diagonal polarization, and Y+X polarization (typically for dark field illumination) are disclosed, that offer substantial imaging advantages for specific lithographic problems, especially at low k₁ values. The initial polarization definition may be limited to specific fixed polarization angles.

Claims

1. A method of improving a transfer of an image of a patterning device layout onto a substrate with a lithographic apparatus, the method comprising:

performing a first process corresponding to each of a plurality of predefined polarization conditions to select a predefined polarization condition that results in a lithographic response value associated with relatively better reproduction of a critical feature; and

performing a second process to iteratively arrive at a desired spatially varying freeform polarization condition that results in a desired value of the lithographic response, wherein the second process uses one or more of the predefined polarization conditions used in the first process.

2. The method of claim 1, comprising:

obtaining a set of test features emulating at least a portion of the patterning device layout that includes the critical feature;

defining a performance metric representing a variation of a lithographic response in reproducing the critical feature over one or more process parameters; and

selecting the plurality of predefined polarization conditions.

3. The method of claim 2, wherein the process parameters include one or more selected from:

focus, exposure dose, exposure wavelength, patterning device attenuation, patterning device bias, test feature size error, test feature size non-uniformity, numerical aperture, illumination shape, and patterning device field type.

4. The method of claim 1, comprising updating a performance metric with the lithographic response values obtained from the first process, and the second process involves iteratively further updating the performance metric until the desired value of the lithographic response is obtained.

5. The method of claim 1, wherein the second process comprises:

obtaining a candidate illumination spatial intensity map;

dividing bright illumination points in the spatial intensity map into distinct pixels or pixel groups;

tuning local polarization of the distinct pixels or pixel groups by applying each of a set of predefined polarization conditions to each of the distinct pixels or pixel groups; and

selecting the spatially varying freeform polarization condition that results in a desired value of the lithographic response.

6. The method of claim 1, wherein the plurality of predefined polarization conditions comprises two or more polarization conditions selected from the group comprising:

no polarization, TE polarization, TM polarization, TM/TE polarization, diagonal polarization, X-polarization, Y-polarization, X+Y polarization, Y+X polarization, or any combination thereof.

7. The method of claim 1, wherein the plurality of predefined polarization conditions comprises TM/TE polarization.

8. The method of claim 1, wherein the lithographic response includes one or more selected from:

critical linewidth non-uniformity, critical dimension error, aspect ratio error, pitch error, side edge placement error, corner edge placement error, patterning device error enhancement factor (MEEF), dose latitude, focus latitude, or any combination thereof.

9. The method of claim 1, wherein the first process comprises obtaining a respective illumination spatial intensity map for each of the plurality of polarization conditions.

10. The method of claim 1, wherein the first process comprises determining a normalized image log slope (NILS) value for each of the plurality of polarization conditions, and selecting the one or more polarization conditions corresponding to high NILS values to form a reduced set.

11. The method of claim 1, wherein the plurality of predefined polarization conditions includes a TM/TE polarization, where in a pupil plane of the radiation system, TM polarization is applied along diagonals, and in each quadrant of the pupil plane, TM polarization gradually and symmetrically transforms into TE polarization at Cartesian axes.

12. The method of claim 11, wherein only TM polarization, only TE polarization, only X polarization, only Y polarization, only diagonal polarization;

or a combination thereof is applied within a radius of the pupil plane with a value of σ

less than or equal to 0.3.

13. The method of claim 1, wherein the plurality of predefined polarization conditions comprises fixed angle polarizations.

14. The method of claim 1, comprising including dark field illumination with σ

>

1 to illuminate the patterning device layout.

15. The method of claim 14, wherein the plurality of predefined polarization conditions includes Y+X polarization.

16. A computer storage product having machine executable instructions, the instructions being executable by a machine to perform a method of configuring a transfer of an image of a patterning device layout onto a substrate with a lithographic apparatus, the method comprising:

performing a first process corresponding to each of a plurality of predefined polarization conditions to select a predefined polarization condition that result in a lithographic response value associated with relatively better reproduction of a critical feature; and

performing a second process to iteratively arrive at a desired spatially varying freeform polarization condition that results in a desired value of the lithographic response, wherein the second process uses one or more of the predefined polarization conditions used in the first process.

17. A device manufacturing method, comprising:

projecting a patterned beam of radiation in a lithographic apparatus onto a radiation sensitive substrate, wherein the radiation has a TM/TE polarization condition that comprises;

TM polarization along diagonals of a pupil plane of the lithographic apparatus, and

TE polarization in each quadrant of the pupil plane.

18. The method of claim 17, wherein the TM polarization gradually and symmetrically transforms into TE polarization at each of the Cartesian axes.

19. A device manufacturing method, comprising:

projecting a patterned beam of radiation in a lithographic apparatus onto a radiation sensitive substrate, wherein the radiation has a spatially varying polarization condition created by a transmissive polarization plate and/or a diffractive optical element.

20. The method of claim 19, wherein the method comprises including dark field illumination with σ

>

1 in the beam of radiation to illuminate a patterning device that patterns the beam of radiation.