FILM DEPOSITION APPARATUS

• US 20110139074A1
• Filed: 12/09/2010
• Published: 06/16/2011
• Est. Priority Date: 12/10/2009
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: KATO, HITOSHI, Kikuchi, Hiroyuki, Takeuchi, Yasushi, Orito, Kohichi, Honma, Manabu
• Granted Patent: US 8,721,790 B2
• Time in Patent Office: Days
• US Class Current: 118/730
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45521 the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes

Abstract

A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

Claims

1. A film deposition apparatus for depositing a film on a substrate by performing a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber, the film deposition apparatus comprising:

a turntable that is rotatably provided in the chamber and has on a first surface a substrate receiving area in which the substrate is placed;

a first reaction gas supplying portion that supplies a first reaction gas to the first surface of the turntable;

a second reaction gas supplying portion that is provided away from the first reaction gas supplying portion along a rotation direction of the turntable and supplies a second reaction gas to the first surface of the turntable;

a separation gas supplying portion that is provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplies a separation gas that separates the first reaction gas and the second reaction gas;

an evacuation port that evacuates the chamber; and

a space defining member that is provided for at least one of the first reaction gas supplying portion and the second reaction gas supplying portion and defines a first space between the at least one of the first reaction gas supplying portion and the second reaction gas supplying portion and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.

2. The film deposition apparatus of claim 1, wherein the space defining member includes a plate member, and

wherein at least apart of the plate member is arranged above the first surface of the turntable so that the first space is defined between the plate member, and the turntable and the second space is defined above the plate member.

3. The film deposition apparatus of claim 1, further comprising an evacuation portion that allows the separation gas to tend to flow to the second space rather than the first space by evacuation.

4. The film deposition apparatus of claim 3, wherein the evacuation portion includes a first evacuation nozzle that is introduced into the chamber through a ceiling portion of the chamber.

5. The film deposition apparatus of claim 3, wherein the evacuation portion includes a second evacuation portion that is provided along at least one of the first reaction nozzle and the second reaction nozzle that has the space defining member attached.

6. The film deposition apparatus of claim 5, wherein the second evacuation nozzle goes through a side portion of the chamber.

7. The film deposition apparatus of claim 3, wherein the evacuation portion includes

a gas flow passage forming member that forms a gas flow passage between at least a part of an upper surface of the plate member and the gas flow passage forming member;

and

a third evacuation nozzle that is introduced into the chamber through the ceiling portion of the chamber and is gaseous communication with the gas flow passage.

8. The film deposition apparatus of claim 1, wherein the separation gas supplying portion is arranged in a separation area that provides a ceiling surface having a height from the turntable, wherein the height is determined so that the first reaction gas and the second reaction gas are impeded from flowing into a space between the ceiling surface and the turntable.