ATOMIC LAYER ETCHING WITH PULSED PLASMAS

• US 20110139748A1
• Filed: 12/13/2010
• Published: 06/16/2011
• Est. Priority Date: 12/15/2009
• Status: Abandoned Application

• Current Assignee: University of Houston System
• Original Assignee: University of Houston (University of Houston System)
• Inventors: DONNELLY, Vincent M., ECONOMOU, Demetre J.
• Application Number:
  US12/966,844
• Publication Number:
  US 20110139748A1
• Time in Patent Office: Days
• US Class Current: 216/37
• CPC Class Codes: H01J 37/32036 AC powered
• CPC Class Codes: H01J 37/32045 Circuits specially adapted for controlling the glow discharge
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32146 Amplitude modulation, includes pulsing
• CPC Class Codes: H01J 37/32174 Circuits specially adapted for controlling the RF discharge
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process

Abstract

A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.

Claims

1. A system comprising:

a pulsed plasma source, comprising;

a spiral coil electrode disposed around a chamber;

an inlet disposed in the tube and in fluid communication with a process gas supply; and

a reaction chamber in fluid communication with the pulsed plasma source comprising;

a substrate support; and

a boundary electrode.

2. The system of claim 1, wherein the spiral coil electrode is coupled to a pulse generator, wherein the pulse generator comprises:

at least one radio frequency function generator; and

an impedance-matching network.

3. The system of claim 1, further comprising a counter electrode disposed proximal to the top of the chamber and at least partially extending into the chamber.

4. The system of claim 3, wherein the counter electrode is disposed vertically opposite the substrate support.

5. The system of claim 1, wherein the inlet is connected to a gas source chosen from the group consisting of oxygen, oxygenated gases, noble gases, halogens, halogenated gases, nitrogen, hydrogen, oxygen, and combinations thereof.

6. The system of claim 1, wherein the boundary electrode is disposed approximately horizontally adjacent to the substrate support within the reaction chamber.

7. The system of claim 1, wherein the substrate support comprises a pulsed electrode.

8. A method for etching a substrate, comprising:

introducing a feed gas into a plasma chamber, the feed gas comprising a mixture of inert gas and reactant gas;

disposing the substrate in the plasma chamber;

generating a plasma from the feed gas, the plasma containing reactants and ions;

saturating a substrate surface with the reactants to form a product layer, the product layer comprising a monolayer of the reactant species and a first monolayer atoms of the substrate; and

removing the product layer by exposing the product layer to the ions.

9. The method according to the claim 8, wherein the generating and the saturating occurs during a first period and the removing occurs during a second period.

10. The method according to claim 9, wherein the plasma source is applied with a first RF power level during a first portion of the first period.

11. The method according to claim 10, wherein the plasma source is turned off during a second portion of the first period.

12. The method according to claim 10, wherein the plasma source is applied with RF power pulses during the second period, the RF power pulses having a second RF power level greater than the first RF power level.

13. The method according to claim 12, wherein the electrode is applied with bias pulses during the second period, wherein the RF power pulses and the bias pulses applied during the second period alternate sequentially, and wherein at least one of the bias pulses is removed from at least one of the RF pulses by about 10 μ

s.

14. The method according to claim 13, wherein the electrode is applied with positive bias pulses during the second period, wherein the electrode provides positive bias pulses to the plasma.

15. The method according to claim 13, wherein the electrode is applied with negative bias pulses during the second period, and wherein the electrode is electrically coupled to the substrate to provide the negative bias pulses to the substrate.

16. The method according to claim 8, wherein the removing the product layer is performed by increasing potential difference between the plasma and the substrate so as to direct the ions from the plasma toward the substrate.

17. The method according to claim 16, wherein the increasing the potential difference is performed by at least one of applying positive voltage to the plasma and applying negative voltage to the substrate.

18. The method according to claim 8, wherein the feed gas is continuously introduced into the chamber.

19. A method for processing a substrate comprising:

directing ions from plasma afterglow toward a substrate surface saturated with a first substance.

20. The method according to claim 19, further comprising:

removing the first substance and a monolayer of substrate atoms with the ions.

21. The method according to claim 20, wherein the first substance comprise reactant species.

22. The method according to claim 19, further comprising:

providing pulsed RF power to the plasma, wherein the directing the ions is performed between the RF pulses.

23. The method according to claim 19, wherein the directing the ions is performed by providing bias pulses to an electrode near the substrate, wherein the bias pulses applied to the electrode and the RF power pulses applied to the plasma source alternate sequentially.