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OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THE SAME

  • US 20110140095A1
  • Filed: 08/31/2010
  • Published: 06/16/2011
  • Est. Priority Date: 12/15/2009
  • Status: Active Grant
First Claim
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1. A thin film transistor comprising:

  • a substrate;

    a gate electrode formed on the substrate;

    a gate insulating layer formed on the gate electrode and exposed portions of the substrate;

    an oxide semiconductor layer formed on the gate insulating layer and comprising an HfInZnO-based oxide semiconductor, wherein the oxide semiconductor layer has a Zn concentration gradient; and

    source and drain regions respectively formed on both sides of the oxide semiconductor layer and the gate insulating layer.

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