FIELD EFFECT TRANSISTOR
First Claim
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1. A field effect transistor comprising:
- a substrate;
a gate electrode over the substrate;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film; and
source and drain electrodes over the oxide semiconductor film,wherein the oxide semiconductor film comprising an oxide including indium, silicon, and zinc, andwherein a content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %.
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Abstract
It is an object to provide a low-cost oxide semiconductor material which is excellent in controllability of the carrier concentration and stability, and to provide a field effect transistor including the oxide semiconductor material. An oxide including indium, silicon, and zinc is used as the oxide semiconductor material. Here, the content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %. The field effect transistor including such an In—Si—Zn—O film can withstand heat treatment at a high temperature and is effective against −BT stress.
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Citations
12 Claims
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1. A field effect transistor comprising:
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a substrate; a gate electrode over the substrate; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and source and drain electrodes over the oxide semiconductor film, wherein the oxide semiconductor film comprising an oxide including indium, silicon, and zinc, and wherein a content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %. - View Dependent Claims (5, 9)
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2. A field effect transistor comprising:
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a substrate; a gate electrode over the substrate; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and
;source and drain electrodes over the oxide semiconductor film, wherein the oxide semiconductor film comprising an oxide including indium, silicon, and zinc, and wherein an electron carrier density of the oxide semiconductor film is 1×
1020/cm3 or lower. - View Dependent Claims (6, 10)
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3. A field effect transistor comprising:
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a substrate; a gate electrode over the substrate; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and
;source and drain electrodes over the oxide semiconductor film, wherein the oxide semiconductor film comprising an oxide including indium, silicon, and zinc, and wherein Hall effect mobility of the oxide semiconductor film is 20 cm2/Vs or lower. - View Dependent Claims (7, 11)
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4. A field effect transistor comprising:
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a substrate; a gate electrode over the substrate; a gate insulating film adjacent to the gate electrode; an oxide semiconductor film adjacent to the gate electrode with the gate insulating film interposed therebetween; and source and drain electrodes electrically connected with the oxide semiconductor film, wherein the oxide semiconductor film comprising an oxide including indium, silicon, and zinc, and wherein a content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %. - View Dependent Claims (8, 12)
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Specification