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FIELD EFFECT TRANSISTOR

  • US 20110140098A1
  • Filed: 12/06/2010
  • Published: 06/16/2011
  • Est. Priority Date: 12/11/2009
  • Status: Active Grant
First Claim
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1. A field effect transistor comprising:

  • a substrate;

    a gate electrode over the substrate;

    a gate insulating film over the gate electrode;

    an oxide semiconductor film over the gate insulating film; and

    source and drain electrodes over the oxide semiconductor film,wherein the oxide semiconductor film comprising an oxide including indium, silicon, and zinc, andwherein a content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %.

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