FIELD EFFECT TRANSISTOR

• US 20110140098A1
• Filed: 12/06/2010
• Published: 06/16/2011
• Est. Priority Date: 12/11/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: AKIMOTO, Kengo, YAMAZAKI, Shunpei
• Granted Patent: US 8,492,759 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

It is an object to provide a low-cost oxide semiconductor material which is excellent in controllability of the carrier concentration and stability, and to provide a field effect transistor including the oxide semiconductor material. An oxide including indium, silicon, and zinc is used as the oxide semiconductor material. Here, the content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %. The field effect transistor including such an In—Si—Zn—O film can withstand heat treatment at a high temperature and is effective against −BT stress.

Claims

1. A field effect transistor comprising:

a substrate;

a gate electrode over the substrate;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film; and

source and drain electrodes over the oxide semiconductor film,

wherein the oxide semiconductor film comprising an oxide including indium, silicon, and zinc, and

wherein a content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %.

5. The field effect transistor according to claim 1, further comprising an insulating film between the substrate and the gate electrode.

9. The field effect transistor according to claim 1, a concentration of hydrogen in the oxide semiconductor film is 5×

10¹⁹ atoms/cm³ or lower.

2. A field effect transistor comprising:

a substrate;

a gate electrode over the substrate;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film; and

;

source and drain electrodes over the oxide semiconductor film,

wherein the oxide semiconductor film comprising an oxide including indium, silicon, and zinc, and

wherein an electron carrier density of the oxide semiconductor film is 1×

10²⁰/cm³ or lower.

6. The field effect transistor according to claim 2, further comprising an insulating film between the substrate and the gate electrode.

10. The field effect transistor according to claim 2, a concentration of hydrogen in the oxide semiconductor film is 5×

10¹⁹ atoms/cm³ or lower.

3. A field effect transistor comprising:

a substrate;

a gate electrode over the substrate;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film; and

;

source and drain electrodes over the oxide semiconductor film,

wherein the oxide semiconductor film comprising an oxide including indium, silicon, and zinc, and

wherein Hall effect mobility of the oxide semiconductor film is 20 cm²/Vs or lower.

7. The field effect transistor according to claim 3, further comprising an insulating film between the substrate and the gate electrode.

11. The field effect transistor according to claim 3, a concentration of hydrogen in the oxide semiconductor film is 5×

10¹⁹ atoms/cm³ or lower.

4. A field effect transistor comprising:

a substrate;

a gate electrode over the substrate;

a gate insulating film adjacent to the gate electrode;

an oxide semiconductor film adjacent to the gate electrode with the gate insulating film interposed therebetween; and

source and drain electrodes electrically connected with the oxide semiconductor film,

wherein the oxide semiconductor film comprising an oxide including indium, silicon, and zinc, and

wherein a content of silicon in the oxide semiconductor film is greater than or equal to 4 mol % and less than or equal to 8 mol %.

8. The field effect transistor according to claim 4, further comprising an insulating film between the substrate and the gate electrode.

12. The field effect transistor according to claim 4, a concentration of hydrogen in the oxide semiconductor film is 5×

10¹⁹ atoms/cm³ or lower.